All MOSFET. IRLL014PBF Datasheet

 

IRLL014PBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRLL014PBF

SMD Transistor Code: LA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 2.7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 110 nS

Drain-Source Capacitance (Cd): 170 pF

Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm

Package: SOT223

IRLL014PBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLL014PBF Datasheet (PDF)

1.1. irll014pbf.pdf Size:162K _upd

IRLL014PBF
IRLL014PBF

IRLL014, SiHLL014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Surface mount VDS (V) 60 • Available in tape and reel RDS(on) ()VGS = 5.0 V 0.20 • Dynamic dV/dt rating • Logic-level gate drive Qg (Max.) (nC) 8.4 • RDS(on) specified at VGS = 4 V and 5 V Qgs (nC) 3.5 Available • Fast switching Qgd (nC) 6.0 • Ease of paralleling Configur

1.2. irll014pbf.pdf Size:219K _international_rectifier

IRLL014PBF
IRLL014PBF

PD - 95387 IRLL014PbF HEXFET Power MOSFET l Surface Mount D l Available in Tape & Reel VDSS = 60V l Dynamic dv/dt Rating l Logic-Level Gate Drive l RDS(on) Specified at VGS=4V & 5V RDS(on) = 0.20? l Fast Switching G l Ease of Paralleling l Lead-Free ID = 2.7A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fa

 3.1. irll014npbf.pdf Size:261K _upd

IRLL014PBF
IRLL014PBF

PD- 95154 IRLL014NPbF ® l Surface Mount l Advanced Process Technology D DSS l Ultra Low On-Resistance l Dynamic dv/dt Rating DS(on) Ω l Fast Switching G l Fully Avalanche Rated l Lead-Free D S Description

3.2. irll014.pdf Size:229K _international_rectifier

IRLL014PBF
IRLL014PBF

PD - 90866A IRLL014 HEXFET Power MOSFET Surface Mount D Available in Tape & Reel VDSS = 60V Dynamic dv/dt Rating Logic-Level Gate Drive RDS(on) Specified at VGS=4V & 5V RDS(on) = 0.20? Fast Switching G Ease of Paralleling ID = 2.7A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedi

 3.3. irll014n.pdf Size:158K _international_rectifier

IRLL014PBF
IRLL014PBF

PD- 91499B IRLL014N HEXFET Power MOSFET Surface Mount D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.14? Fast Switching G Fully Avalanche Rated ID = 2.0A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This b

3.4. sihll014 irll014.pdf Size:168K _vishay

IRLL014PBF
IRLL014PBF

Datasheet: IRF150SMD , IRF1607PBF , IRF1704 , IRF1902PBF , IRF200B211 , IRLL2705PBF , IRLL3303PBF , IRLL014NPBF , APT50M38JLL , IRLL024NPBF , IRLL024ZPBF , IRLL110TRPBF , IRLL2703PBF , IRFL014NPBF , IRFL014PBF , IRFL024NPBF , IRFL024ZPBF .

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