IRFL014NPBF Datasheet and Replacement
Type Designator: IRFL014NPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 1.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 7.1 nS
Cossⓘ - Output Capacitance: 72 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: SOT223
- MOSFET Cross-Reference Search
IRFL014NPBF Datasheet (PDF)
irfl014npbf.pdf

PD- 95352IRFL014NPbFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.16l Fully Avalanche RatedGl Lead-FreeID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on
auirfl014n.pdf

AUTOMOTIVE GRADEAUIRFL014NHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-ResistanceV(BR)DSS 55V Dynamic dV/dT Rating 150C Operating TemperatureRDS(on) max.0.16G Fast Switching Fully Avalanche RatedS Repetitive Avalanche Allowed up to Tjmax ID 1.9A Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed f
irfl014n.pdf

PD- 92003AIRFL014NHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.16 Fast SwitchingG Fully Avalanche RatedID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silic
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: S60N18R | BSS83P | SIHFBC40L | GSM4936S | IXFH15N60 | APT901R3HN | ATM2N65TE
Keywords - IRFL014NPBF MOSFET datasheet
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History: S60N18R | BSS83P | SIHFBC40L | GSM4936S | IXFH15N60 | APT901R3HN | ATM2N65TE



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