IRFL014PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFL014PBF
Marking Code: FL014
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 2.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2
Ohm
Package:
SOT223
IRFL014PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFL014PBF
Datasheet (PDF)
..1. Size:811K international rectifier
irfl014pbf.pdf 
PD- 95227IRFL014PbF_ Lead-Free04/28/04Document Number: 91191 www.vishay.com1IRFL014PbFDocument Number: 91191 www.vishay.com2IRFL014PbFDocument Number: 91191 www.vishay.com3IRFL014PbFDocument Number: 91191 www.vishay.com4IRFL014PbFDocument Number: 91191 www.vishay.com5IRFL014PbFDocument Number: 91191 www.vishay.com6IRFL014PbFDocument Number: 9119
7.1. Size:158K international rectifier
irfl014npbf.pdf
PD- 95352IRFL014NPbFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.16l Fully Avalanche RatedGl Lead-FreeID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on
7.3. Size:215K international rectifier
auirfl014n.pdf
AUTOMOTIVE GRADEAUIRFL014NHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-ResistanceV(BR)DSS 55V Dynamic dV/dT Rating 150C Operating TemperatureRDS(on) max.0.16G Fast Switching Fully Avalanche RatedS Repetitive Avalanche Allowed up to Tjmax ID 1.9A Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifically designed f
7.4. Size:144K international rectifier
irfl014n.pdf
PD- 92003AIRFL014NHEXFET Power MOSFET Surface MountD Advanced Process TechnologyVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.16 Fast SwitchingG Fully Avalanche RatedID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silic
7.5. Size:998K vishay
irfl014 sihfl014.pdf
IRFL014, SiHFL014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) ()VGS = 10 V 0.20 Surface Mount Available in Tape and ReelQg (Max.) (nC) 11 Dynamic dV/dt RatingQgs (nC) 3.1 Fast SwitchingQgd (nC) 5.8 Ease of ParallelingConfiguration Single Simple Drive Requirements
7.6. Size:158K infineon
irfl014npbf.pdf
PD- 95352IRFL014NPbFHEXFET Power MOSFETl Surface Mountl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl Fast SwitchingRDS(on) = 0.16l Fully Avalanche RatedGl Lead-FreeID = 1.9ASDescriptionFifth Generation HEXFET MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on
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