IRFL014PBF Specs and Replacement
Type Designator: IRFL014PBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: SOT223
IRFL014PBF substitution
IRFL014PBF datasheet
irfl014pbf.pdf
PD- 95227 IRFL014PbF _ Lead-Free 04/28/04 Document Number 91191 www.vishay.com 1 IRFL014PbF Document Number 91191 www.vishay.com 2 IRFL014PbF Document Number 91191 www.vishay.com 3 IRFL014PbF Document Number 91191 www.vishay.com 4 IRFL014PbF Document Number 91191 www.vishay.com 5 IRFL014PbF Document Number 91191 www.vishay.com 6 IRFL014PbF Document Number 9119... See More ⇒
irfl014npbf.pdf
PD- 95352 IRFL014NPbF HEXFET Power MOSFET l Surface Mount l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l Dynamic dv/dt Rating l Fast Switching RDS(on) = 0.16 l Fully Avalanche Rated G l Lead-Free ID = 1.9A S Description Fifth Generation HEXFET MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on... See More ⇒
auirfl014n.pdf
AUTOMOTIVE GRADE AUIRFL014N HEXFET Power MOSFET Features Advanced Planar Technology D Low On-Resistance V(BR)DSS 55V Dynamic dV/dT Rating 150 C Operating Temperature RDS(on) max. 0.16 G Fast Switching Fully Avalanche Rated S Repetitive Avalanche Allowed up to Tjmax ID 1.9A Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed f... See More ⇒
Detailed specifications: IRLL3303PBF , IRLL014NPBF , IRLL014PBF , IRLL024NPBF , IRLL024ZPBF , IRLL110TRPBF , IRLL2703PBF , IRFL014NPBF , RU7088R , IRFL024NPBF , IRFL024ZPBF , IRFL1006PBF , IRFL110PBF , IRFL210PBF , IRFL214PBF , IRFL4105PBF , IRFL4310PBF .
Keywords - IRFL014PBF MOSFET specs
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