IRLZ24NLPBF PDF and Equivalents Search

 

IRLZ24NLPBF Specs and Replacement

Type Designator: IRLZ24NLPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO262

IRLZ24NLPBF substitution

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IRLZ24NLPBF datasheet

 ..1. Size:301K  international rectifier
irlz24nlpbf irlz24nspbf.pdf pdf_icon

IRLZ24NLPBF

PD - 95584 IRLZ24NSPbF IRLZ24NLPbF l Logic-Level Gate Drive HEXFET Power MOSFET l Advanced Process Technology l Surface Mount (IRLZ24NS) D VDSS = 55V l Low-profile through-hole (IRLZ24NL) l 175 C Operating Temperature RDS(on) = 0.06 l Fast Switching G l Fully Avalanche Rated ID = 18A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize... See More ⇒

 6.1. Size:197K  international rectifier
irlz24ns irlz24nl.pdf pdf_icon

IRLZ24NLPBF

PD - 91358E IRLZ24NS/L HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology D VDSS = 55V Surface Mount (IRLZ24NS) Low-profile through-hole (IRLZ24NL) 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G Fully Avalanche Rated ID = 18A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques ... See More ⇒

 6.2. Size:271K  international rectifier
auirlz24nl auirlz24ns.pdf pdf_icon

IRLZ24NLPBF

AUIRLZ24NS AUTOMOTIVE GRADE AUIRLZ24NL Features HEXFET Power MOSFET D l Advanced Process Technology VDSS 55V l Logic Level Gate Drive l 175 C Operating Temperature RDS(on) max. 0.06 l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID 18A l Lead-Free, RoHS Compliant S l Automotive Qualified * D D Description Specifically designed for Automotive application... See More ⇒

 7.1. Size:109K  international rectifier
irlz24n.pdf pdf_icon

IRLZ24NLPBF

PD - 9.1357A IRLZ24N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.06 Fast Switching G Fully Avalanche Rated ID = 18A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible... See More ⇒

Detailed specifications: IRLZ34NLPBF, IRLZ34NPBF, IRLZ34NSPBF, IRLZ34PBF, IRLZ34S, IRLZ34SPBF, IRLZ24L, IRLZ24LPBF, 2N7000, IRLZ24NPBF, IRLZ24NSPBF, IRLZ24PBF, IRLZ24S, IRLZ24SPBF, IRLZ14L, IRLZ14PBF, IRLZ14S

Keywords - IRLZ24NLPBF MOSFET specs

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