IRLI540GPBF Datasheet and Replacement
Type Designator: IRLI540GPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 560 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.077 Ohm
Package: TO220F
IRLI540GPBF substitution
IRLI540GPBF Datasheet (PDF)
irli540g irli540gpbf sihli540g.pdf

IRLI540G, SiHLI540GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 5 V 0.077f = 60 Hz)Qg (Max.) (nC) 64 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 9.4 Logic-Level Gate DriveQgd (nC) 27 RDS (on) Specified at VGS = 4 V and 5 V Fast SwitchingConfigur
irli540g.pdf

Document Number: 90399 www.vishay.com1391Document Number: 90399 www.vishay.com1392Document Number: 90399 www.vishay.com1393Document Number: 90399 www.vishay.com1394Document Number: 90399 www.vishay.com1395Document Number: 90399 www.vishay.com1396Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as
irli540npbf.pdf

PD -95454IRLI540NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Isolated Package VDSS = 100Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.044l Fully Avalanche Rated Gl Lead-FreeID = 23ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing technique
Datasheet: IRLI3705NPBF , IRLI3803PBF , IRLI520G , IRLI520GPBF , IRLI520NPBF , IRLI530G , IRLI530GPBF , IRLI540G , IRFB3607 , IRLI540NPBF , IRLI620GPBF , IRLI630GPBF , IRLI640GPBF , IRLIB4343 , IRLIB9343PBF , IRLIZ14GPBF , IRLIZ24NPBF .
History: 2SK950
Keywords - IRLI540GPBF MOSFET datasheet
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History: 2SK950



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