IRLI620GPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLI620GPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 91 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220F
IRLI620GPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLI620GPBF Datasheet (PDF)
irli620gpbf.pdf
PD- 95753IRLI620GPbF Lead-Freewww.irf.com 18/23/04IRLI620GPbF2 www.irf.comIRLI620GPbFwww.irf.com 3IRLI620GPbF4 www.irf.comIRLI620GPbFwww.irf.com 5IRLI620GPbF6 www.irf.comIRLI620GPbFwww.irf.com 7IRLI620GPbFTO-220 Full-Pak Package OutlineDimensions are shown in millimeters (inches)TO-220 Full-Pak Part Marking InformationEXAMPLE: THIS IS AN IRFI8
irli620g.pdf
PD - 9.1235IRLI620GHEXFET Power MOSFETIsolated PackageHigh Voltage Isolation = 2.5KVRMS VDSS = 200VSink to Lead Creepage Dist. 4.8mmLogic-Level Gate DriveRDS(on) = 0.80RDS(ON) Specified at VGS = 4V & 5VFast SwitchingEase of parallelingID = 4.0ADescriptionThird Generation HEXFETs from International Rectifier provide the designerwith the best combination of fast
irli620g sihli620g.pdf
IRLI620G, SiHLI620GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 5.0 V 0.80f = 60 Hz)RoHS*Qg (Max.) (nC) 16COMPLIANT Sink to Lead Creepage Dist. 4.8 mmQgs (nC) 2.7 Logic-Level Gate DriveQgd (nC) 9.6 RDS(on) Specified at VGS = 4V and 5 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HGI040N06SL
History: HGI040N06SL
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