IRLI620GPBF MOSFET Datasheet: N-Ch, 200V, 4A. Full specification with pinout and replacement list

IRLI620GPBF Specs and Replacement

Type Designator: IRLI620GPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 91 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220F

IRLI620GPBF substitution

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IRLI620GPBF datasheet

..1. Size:1411K international rectifier
irli620gpbf.pdf pdf_icon

PD- 95753 IRLI620GPbF Lead-Free www.irf.com 1 8/23/04 IRLI620GPbF 2 www.irf.com IRLI620GPbF www.irf.com 3 IRLI620GPbF 4 www.irf.com IRLI620GPbF www.irf.com 5 IRLI620GPbF 6 www.irf.com IRLI620GPbF www.irf.com 7 IRLI620GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information EXAMPLE THIS IS AN IRFI8... See More ⇒

6.1. Size:157K international rectifier
irli620g.pdf pdf_icon

PD - 9.1235 IRLI620G HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS = 200V Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS(on) = 0.80 RDS(ON) Specified at VGS = 4V & 5V Fast Switching Ease of paralleling ID = 4.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast... See More ⇒

6.2. Size:1895K vishay
irli620g sihli620g.pdf pdf_icon