IRFF9131 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFF9131
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO39
IRFF9131 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFF9131 Datasheet (PDF)
2n6849 irff9130.pdf
PD - 90550DIRFF9130 JANTX2N6849REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849HEXFETTRANSISTORS JANS2N6849THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRFF9130 -100V 0.30 -6.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry an
irff9110.pdf
PD - 90388REPETITIVE AVALANCHE AND dv/dt RATEDHEXFETTRANSISTORSTHRU-HOLE (TO-205AF) IRFF9110100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRFF9110 -100V 1.2 -2.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desi
2n6845 irff9120.pdf
PD - 90552CIRFF9120REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6845HEXFETTRANSISTORS JANTXV2N6845THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/563100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF9120 -100V 0.60 -4.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proce
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: CS320 | IRFH8337
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