IRFF9231
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFF9231
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 170
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5
Ohm
Package:
TO39
IRFF9231
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFF9231
Datasheet (PDF)
7.1. Size:131K international rectifier
2n6851 irff9230.pdf
PD - 90551DIRFF9230 JANTX2N6851REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6851HEXFETTRANSISTORS JANS2N6851THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/564200V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) ID IRFF9230 -200V 0.80 -4.0AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry
8.1. Size:130K international rectifier
irff9210.pdf
PD - 90382REPETITIVE AVALANCHE AND dv/dt RATEDHEXFETTRANSISTORSTHRU-HOLE (TO-205AF) IRFF9210200V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF9210 -200V 3.0 -1.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig
8.2. Size:130K international rectifier
2n6847 irff9220.pdf
PD - 90553CIRFF9220REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6847HEXFETTRANSISTORS JANTXV2N6847THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/563200V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF9220 -200V 1.5 -2.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces
Datasheet: IRFP360LC
, IRFP3710
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