IRF9132 MOSFET Datasheet: P-Ch, 100V, 10A. Full specification with pinout and replacement list

IRF9132 Specs and Replacement

Type Designator: IRF9132

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO3

IRF9132 substitution

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IRF9132 datasheet

8.1. Size:149K international rectifier
2n6804 irf9130.pdf pdf_icon

PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804 HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9130 -100V 0.30 -11A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique pr... See More ⇒

8.2. Size:520K samsung
irfp9130-33 irf9130-33 irf9530-33.pdf pdf_icon

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8.3. Size:520K samsung
irf9130-33 irfp9130-33 irf9530-33.pdf pdf_icon

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8.4. Size:18K semelab
irf9130smd05 irfnj9130.pdf pdf_icon

IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET 7.54 (0.296) FOR HI REL 0.76 (0.030) min. APPLICATIONS 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005) 1 3 VDSS -100V ID(cont) -11A 2 RDS(on) 0.30 0.127 (0.005) FEATURES 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) HERMETICALLY SEALED max. 7.26 (... See More ⇒