IRF9150 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF9150

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 25 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 110 nS

Drain-Source Capacitance (Cd): 850 pF

Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm

Package: TO3

IRF9150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF9150 Datasheet (PDF)

1.1. irf9150 irf9151.pdf Size:117K _upd

1.2. irf9150.pdf Size:245K _update-mosfet

isc P-Channel MOSFET Transistor IRF9150 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.15Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Be designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching

5.1. irf9130smd05.pdf Size:18K _upd-mosfet

IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET 7.54 (0.296) FOR HI–REL 0.76 (0.030) min. APPLICATIONS 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005) 1 3 VDSS -100V ID(cont) -11A 2 Ω RDS(on) 0.30Ω 0.127 (0.005) FEATURES 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) • HERMETICALLY SEALED max. 7.26 (

5.2. irf9130smd.pdf Size:20K _upd-mosfet

IRF9130SMD MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS -100V ID(cont) -8A RDS(on) 0.35 FEATURES • HERMETICALLY SEALED • SIMPLE DRIVE REQUI

5.3. 2n6804 irf9130.pdf Size:149K _international_rectifier

PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804 HEXFET?TRANSISTORS JANTXV2N6804 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9130 -100V 0.30 ? -11A The HEXFET?technology is the key to International Rectifier�s advanced line of power MOSFET transistors. The efficient geometry and unique processing of

5.4. irf9140.pdf Size:148K _international_rectifier

PD - 93976A REPETITIVE AVALANCHE AND dv/dt RATED IRF9140 HEXFET?TRANSISTORS 100V, P-CHANNEL THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF9140 -100V 0.2? -18A The HEXFET?technology is the key to International Rectifier�s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest �State of the Art� design achieves: ver

5.5. irfp9130-33 irf9130-33 irf9530-33.pdf Size:520K _samsung