All MOSFET. IRF9150 Datasheet

 

IRF9150 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF9150
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO3

 IRF9150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF9150 Datasheet (PDF)

 ..1. Size:117K  njs
 irf9150 irf9151.pdf

IRF9150 IRF9150

 ..2. Size:245K  inchange semiconductor
 irf9150.pdf

IRF9150 IRF9150

isc P-Channel MOSFET Transistor IRF9150FEATURESStatic drain-source on-resistance:RDS(on)0.15100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONBe designed for applications such as switching regulators,switching convertors, motor drivers, relay drivers, and driversfor high power bipolar switching

 9.1. Size:149K  international rectifier
 2n6804 irf9130.pdf

IRF9150 IRF9150

PD - 90549CIRF9130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804HEXFETTRANSISTORS JANTXV2N6804THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF9130 -100V 0.30 -11AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique pr

 9.2. Size:148K  international rectifier
 irf9140.pdf

IRF9150 IRF9150

PD - 93976AREPETITIVE AVALANCHE AND dv/dt RATED IRF9140HEXFETTRANSISTORS 100V, P-CHANNELTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF9140 -100V 0.2 -18AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig

 9.3. Size:520K  samsung
 irfp9130-33 irf9130-33 irf9530-33.pdf

IRF9150 IRF9150

 9.4. Size:520K  samsung
 irf9130-33 irfp9130-33 irf9530-33.pdf

IRF9150 IRF9150

 9.5. Size:18K  semelab
 irf9130smd05 irfnj9130.pdf

IRF9150 IRF9150

IRFNJ9130IRF9130SMD05MECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET7.54 (0.296)FOR HIREL0.76 (0.030)min.APPLICATIONS3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005)1 3VDSS -100VID(cont) -11A2RDS(on) 0.30 0.127 (0.005) FEATURES16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020) HERMETICALLY SEALED max.7.26 (

 9.6. Size:20K  semelab
 irf9130smd.pdf

IRF9150 IRF9150

IRF9130SMDMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS -100VID(cont) -8A RDS(on) 0.35FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUI

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FRK264R | FRK160H

 

 
Back to Top