IRF9150 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF9150
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 25 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 110 nS
Drain-Source Capacitance (Cd): 850 pF
Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm
Package: TO3
IRF9150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF9150 Datasheet (PDF)
1.1. irf9150 irf9151.pdf 
Size:117K _upd
5.1. irf9130smd05.pdf Size:18K _upd-mosfet
IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET 7.54 (0.296) FOR HI–REL 0.76 (0.030) min. APPLICATIONS 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005) 1 3 VDSS -100V ID(cont) -11A 2 Ω RDS(on) 0.30Ω 0.127 (0.005) FEATURES 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) • HERMETICALLY SEALED max. 7.26 (
5.2. irf9130smd.pdf Size:20K _upd-mosfet
IRF9130SMD MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS -100V ID(cont) -8A RDS(on) 0.35 FEATURES • HERMETICALLY SEALED • SIMPLE DRIVE REQUI
5.3. irf9140.pdf Size:148K _international_rectifier
PD - 93976A REPETITIVE AVALANCHE AND dv/dt RATED IRF9140 HEXFET?TRANSISTORS 100V, P-CHANNEL THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF9140 -100V 0.2? -18A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: ver
5.4. 2n6804 irf9130.pdf Size:149K _international_rectifier
PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804 HEXFET?TRANSISTORS JANTXV2N6804 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9130 -100V 0.30 ? -11A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of
5.5. irfp9130-33 irf9130-33 irf9530-33.pdf Size:520K _samsung
5.6. irf9130-33 irfp9130-33 irf9530-33.pdf Size:520K _samsung
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
