IRF9150 Datasheet and Replacement
Type Designator: IRF9150
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 850 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO3
IRF9150 substitution
IRF9150 Datasheet (PDF)
irf9150.pdf

isc P-Channel MOSFET Transistor IRF9150FEATURESStatic drain-source on-resistance:RDS(on)0.15100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONBe designed for applications such as switching regulators,switching convertors, motor drivers, relay drivers, and driversfor high power bipolar switching
2n6804 irf9130.pdf

PD - 90549CIRF9130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804HEXFETTRANSISTORS JANTXV2N6804THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562]100V, P-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF9130 -100V 0.30 -11AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique pr
irf9140.pdf

PD - 93976AREPETITIVE AVALANCHE AND dv/dt RATED IRF9140HEXFETTRANSISTORS 100V, P-CHANNELTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF9140 -100V 0.2 -18AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art desig
Datasheet: IRFF9132 , IRFF9133 , IRFF9231 , IRFF9232 , IRFF9233 , IRF9131 , IRF9132 , IRF9133 , 4N60 , IRF9151 , IRF9240SMD , IRF9241 , IRF9242 , IRF9243 , IRF3706 , IRF3706L , IRF3706LPBF .
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