All MOSFET. IRF7701GPBF Datasheet

 

IRF7701GPBF Datasheet and Replacement


   Type Designator: IRF7701GPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 1520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TSSOP8
 

 IRF7701GPBF substitution

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IRF7701GPBF Datasheet (PDF)

 ..1. Size:236K  international rectifier
irf7701gpbf.pdf pdf_icon

IRF7701GPBF

PD - 96146AIRF7701GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFET VDSS RDS(on) max IDl Very Small SOIC Package0.011@VGS = -4.5V -10Al Low Profile (

 7.1. Size:141K  international rectifier
irf7701.pdf pdf_icon

IRF7701GPBF

PD - 93940IRF7701HEXFET Power MOSFET Ultra Low On-ResistanceVDSS RDS(on) max ID P-Channel MOSFET0.011@VGS = -4.5V -10A Very Small SOIC Package-12V 0.015@VGS = -2.5V -8.5A Low Profile (

 8.1. Size:234K  international rectifier
irf7705gpbf.pdf pdf_icon

IRF7701GPBF

PD- 96142AIRF7705GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETVDSS RDS(on) max (mW) IDl Very Small SOIC Package-30V 18 @VGS = -10V -8.0Al Low Profile (

 8.2. Size:234K  international rectifier
irf7705pbf.pdf pdf_icon

IRF7701GPBF

PD-96022AIRF7705PbFHEXFET Power MOSFETl Ultra Low On-ResistanceVDSS RDS(on) max (mW) IDl P-Channel MOSFET-30V 18 @VGS = -10V -8.0Al Very Small SOIC Package 30 @VGS = -4.5V -6.0Al Low Profile (

Datasheet: IRF830APBF , IRF830ASPBF , IRF830LPBF , IRF830PBF , IRF830SPBF , IRF7700 , IRF7700GPBF , IRF7701 , HY1906P , IRF7702GPBF , IRF7702PBF , IRF7703 , IRF7703GPBF , IRF7703PBF , IRFR7440PBF , IRFR7446PBF , IRFR7540PBF .

History: SI7N65F

Keywords - IRF7701GPBF MOSFET datasheet

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