IRFL9110 Specs and Replacement

Type Designator: IRFL9110

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 94 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: SOT223

IRFL9110 substitution

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IRFL9110 datasheet

 ..1. Size:171K  international rectifier
irfl9110.pdf pdf_icon

IRFL9110

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 ..2. Size:225K  international rectifier
irfl9110pbf.pdf pdf_icon

IRFL9110

PD - 95320 IRFL9110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel D VDSS = -100V Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel RDS(on) = 1.2 Fast Switching G Ease of Paralleling Lead-Free ID = -1.1A S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, rugg... See More ⇒

 ..3. Size:1443K  vishay
irfl9110 sihfl9110.pdf pdf_icon

IRFL9110

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 0.1. Size:894K  cn vbsemi
irfl9110trpbf.pdf pdf_icon

IRFL9110

IRFL9110TRPBF www.VBsemi.tw P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100% Rg and UIS Tested 0.200 at VGS = - 10 V - 3.0 - 100 13.2 nC 0.230 at VGS = - 6 V - 2.4 APPLICATIONS Available Active Clamp in Intermediate DC/ DC Power Supplies S H-Bridge High Side Switch for Lighting Application ... See More ⇒

Detailed specifications: IRFL024N, IRFL1006, IRFL110, IRFL210, IRFL214, IRFL4105, IRFL4310, IRFL9014, 2N7002, IRFM014A, IRFM044, IRFM054, IRFM110A, IRFM120A, IRFM140, IRFM150, IRFM210A

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.