IRLU3717PBF MOSFET Datasheet: N-Ch, 20V, 120A. Full specification with pinout and replacement list

IRLU3717PBF Specs and Replacement

Type Designator: IRLU3717PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 920 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO251

IRLU3717PBF substitution

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IRLU3717PBF datasheet

..1. Size:266K international rectifier
irlr3717pbf irlu3717pbf.pdf pdf_icon

PD - 95776A IRLR3717PbF IRLU3717PbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 20V 4.0m 21nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l ... See More ⇒

..2. Size:266K international rectifier
irlu3717pbf irlr3717pbf.pdf pdf_icon

6.1. Size:260K inchange semiconductor
irlu3717.pdf pdf_icon

isc N-Channel MOSFET Transistor IRLU3717 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒

7.1. Size:297K international rectifier
irlr3715zcpbf irlu3715zcpbf.pdf pdf_icon

PD - 96053 IRLR3715ZCPbF IRLU3715ZCPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 20V 11m 7.2nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage D-Pa... See More ⇒