All MOSFET. IRFM054 Datasheet

 

IRFM054 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFM054
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 180(max) nC
   trⓘ - Rise Time: 180(max) nS
   Cossⓘ - Output Capacitance: 2000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TO254AA

 IRFM054 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFM054 Datasheet (PDF)

 ..1. Size:190K  international rectifier
 irfm054.pdf

IRFM054 IRFM054

PD - 90709BIRFM054POWER MOSFET60V, N-CHANNELTHRU-HOLE (TO-254AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFM054 0.027 35A*HEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-sistance combined with high transconductance. HEXFET

 9.1. Size:189K  international rectifier
 irfm044.pdf

IRFM054 IRFM054

PD - 90708BIRFM044POWER MOSFET60V, N-CHANNELTHRU-HOLE (TO-254AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFM044 0.04 35A*HEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-sistance combined with high transconductance. HEXFET

 9.2. Size:271K  international rectifier
 irfm064.pdf

IRFM054 IRFM054

PD-90875CIRFM064POWER MOSFET60V, N-CHANNELTHRU-HOLE (TO-254AA)HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFM064 0.017 35A*HEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.TO-254AAThe efficient geometry design achieves very low on-stateresistance combined with high transconductance.

 9.3. Size:939K  samsung
 irfm014a.pdf

IRFM054 IRFM054

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 60V2 Lower RDS(ON) : 0.097 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

Datasheet: IRFL210 , IRFL214 , IRFL4105 , IRFL4310 , IRFL9014 , IRFL9110 , IRFM014A , IRFM044 , SPP20N60C3 , IRFM110A , IRFM120A , IRFM140 , IRFM150 , IRFM210A , IRFM214A , IRFM220A , IRFM224A .

 

 
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