IRFM054 Specs and Replacement

Type Designator: IRFM054

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 max nS

Cossⓘ - Output Capacitance: 2000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TO254AA

IRFM054 substitution

- MOSFET ⓘ Cross-Reference Search

 

IRFM054 datasheet

 ..1. Size:190K  international rectifier
irfm054.pdf pdf_icon

IRFM054

PD - 90709B IRFM054 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM054 0.027 35A* HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET... See More ⇒

 9.1. Size:189K  international rectifier
irfm044.pdf pdf_icon

IRFM054

PD - 90708B IRFM044 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM044 0.04 35A* HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET ... See More ⇒

 9.2. Size:271K  international rectifier
irfm064.pdf pdf_icon

IRFM054

PD-90875C IRFM064 POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM064 0.017 35A* HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. TO-254AA The efficient geometry design achieves very low on-state resistance combined with high transconductance. ... See More ⇒

 9.3. Size:939K  samsung
irfm014a.pdf pdf_icon

IRFM054

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 60V 2 Lower RDS(ON) 0.097 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V... See More ⇒

Detailed specifications: IRFL210, IRFL214, IRFL4105, IRFL4310, IRFL9014, IRFL9110, IRFM014A, IRFM044, IRLB4132, IRFM110A, IRFM120A, IRFM140, IRFM150, IRFM210A, IRFM214A, IRFM220A, IRFM224A

Keywords - IRFM054 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.