All MOSFET. IRLR8103VPBF Datasheet

 

IRLR8103VPBF Datasheet and Replacement


   Type Designator: IRLR8103VPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 91 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 1064 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO252
 

 IRLR8103VPBF substitution

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IRLR8103VPBF Datasheet (PDF)

 ..1. Size:209K  international rectifier
irlr8103vpbf.pdf pdf_icon

IRLR8103VPBF

PD - 95093AIRLR8103VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching LossesD Minimizes Parallel MOSFETs for high currentapplications 100% RG Tested Lead-FreeGDescriptionThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedented balanceS D-Pakof

 5.1. Size:111K  international rectifier
irlr8103v.pdf pdf_icon

IRLR8103VPBF

PD-94021AIRLR8103V N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction LossesD Low Switching Losses Minimizes Parallel MOSFETs for high currentapplicationsDescriptionGThis new device employs advanced HEXFET PowerMOSFET technology to achieve an unprecedentedbalance of on-resistance and gate charge. The reducedS D-

 5.2. Size:847K  cn vbsemi
irlr8103vtr.pdf pdf_icon

IRLR8103VPBF

IRLR8103VTRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA

 5.3. Size:262K  inchange semiconductor
irlr8103v.pdf pdf_icon

IRLR8103VPBF

Isc N-Channel MOSFET Transistor IRLR8103VFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: IRLU8259PBF , IRLU8721PBF , IRLU8726PBF , IRLU8729PBF , IRLU8743PBF , IRLU9343-701 , IRLR8203PBF , IRLR8103 , IRF2807 , IRLR8113PBF , IRLR8256PBF , IRLR8259PBF , IRLR8503 , IRLR8503PBF , IRLR8715CPBF , IRLR8721PBF , IRLR8721PBF-1 .

History: UPA2592T1H | FDMA86265P

Keywords - IRLR8103VPBF MOSFET datasheet

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