All MOSFET. IRLR3114ZPBF Datasheet

 

IRLR3114ZPBF Datasheet and Replacement


   Type Designator: IRLR3114ZPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 650 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
   Package: TO252
 

 IRLR3114ZPBF substitution

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IRLR3114ZPBF Datasheet (PDF)

 ..1. Size:315K  international rectifier
 irlu3114zpbf irlr3114zpbf.pdf pdf_icon

IRLR3114ZPBF

PD - 97284AIRLR3114ZPbFIRLU3114ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic LevelGRDS(on) = 4.9mDescriptionThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremely lowon-resistance

 ..2. Size:315K  international rectifier
 irlr3114zpbf irlu3114zpbf.pdf pdf_icon

IRLR3114ZPBF

PD - 97284AIRLR3114ZPbFIRLU3114ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic LevelGRDS(on) = 4.9mDescriptionThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremely lowon-resistance

 5.1. Size:706K  infineon
 auirlr3114z auirlu3114z.pdf pdf_icon

IRLR3114ZPBF

AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L

 5.2. Size:242K  inchange semiconductor
 irlr3114z.pdf pdf_icon

IRLR3114ZPBF

isc N-Channel MOSFET Transistor IRLR3114Z,IIRLR3114ZFEATURESStatic drain-source on-resistance:RDS(on)4.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 40 VDSSV Gat

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Datasheet: IRLR2703PBF , IRLR2705PBF , IRLR2905PBF , IRLR2905ZPBF , IRLR2908PBF , IRLR3103PBF , IRLR3105PBF , IRLR3110ZPBF , 20N60 , IRLR3303PBF , IRLR3410PBF , IRLR3636PBF , IRLR6225PBF , IRLU2905PBF , IRLU3105PBF , IRLU2908PBF , IRLU014N .

History: LTP70N06 | IXFA130N10T2

Keywords - IRLR3114ZPBF MOSFET datasheet

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