All MOSFET. IRLS3036-7PPBF Datasheet

 

IRLS3036-7PPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLS3036-7PPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 380 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 240 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 110 nC
   trⓘ - Rise Time: 540 nS
   Cossⓘ - Output Capacitance: 1025 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
   Package: TO263CA7

 IRLS3036-7PPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLS3036-7PPBF Datasheet (PDF)

 ..1. Size:307K  international rectifier
irls3036-7ppbf.pdf

IRLS3036-7PPBF
IRLS3036-7PPBF

PD -97148AIRLS3036-7PPbFHEXFET Power MOSFETApplicationsDVDSS 60Vl DC Motor Drivel High Efficiency Synchronous Rectification in SMPS RDS(on) typ.1.5m:l Uninterruptible Power Supplymax. 1.9m:l High Speed Power SwitchingGID (Silicon Limited)300Acl Hard Switched and High Frequency CircuitsID (Package Limited)240ASBenefitsl Optimized for Logic Level

 ..2. Size:307K  infineon
irls3036-7ppbf.pdf

IRLS3036-7PPBF
IRLS3036-7PPBF

PD -97148AIRLS3036-7PPbFHEXFET Power MOSFETApplicationsDVDSS 60Vl DC Motor Drivel High Efficiency Synchronous Rectification in SMPS RDS(on) typ.1.5m:l Uninterruptible Power Supplymax. 1.9m:l High Speed Power SwitchingGID (Silicon Limited)300Acl Hard Switched and High Frequency CircuitsID (Package Limited)240ASBenefitsl Optimized for Logic Level

 3.1. Size:688K  infineon
auirls3036-7p.pdf

IRLS3036-7PPBF
IRLS3036-7PPBF

AUTOMOTIVE GRADE AUIRLS3036-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.9m 175C Operating Temperature ID (Silicon Limited) 300A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T

 6.1. Size:355K  international rectifier
irls3036pbf irlsl3036pbf.pdf

IRLS3036-7PPBF
IRLS3036-7PPBF

PD -97358IRLS3036PbFIRLSL3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic

 6.2. Size:288K  international rectifier
auirls3036.pdf

IRLS3036-7PPBF
IRLS3036-7PPBF

AUTOMOTIVE GRADEAUIRLS3036HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS 60V Ultra Low On-ResistanceRDS(on) typ.1.9m Logic Level Gate Drive Dynamic dv/dt Ratingmax. 2.4mG 175C Operating TemperatureID (Silicon Limited) 270A Fast SwitchingID (Package Limited)S 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

 6.3. Size:355K  infineon
irls3036pbf irlsl3036pbf.pdf

IRLS3036-7PPBF
IRLS3036-7PPBF

PD -97358IRLS3036PbFIRLSL3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic

 6.4. Size:258K  inchange semiconductor
irls3036.pdf

IRLS3036-7PPBF
IRLS3036-7PPBF

Isc N-Channel MOSFET Transistor IRLS3036FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NVMFS5C628NL | AM20P15-295D

 

 
Back to Top