All MOSFET. IRLS4030PBF Datasheet

 

IRLS4030PBF Datasheet and Replacement


   Type Designator: IRLS4030PBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 87 nC
   tr ⓘ - Rise Time: 330 nS
   Cossⓘ - Output Capacitance: 670 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: TO263
 

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IRLS4030PBF Datasheet (PDF)

 ..1. Size:382K  international rectifier
 irls4030pbf irlsl4030pbf.pdf pdf_icon

IRLS4030PBF

PD - 97370IRLS4030PbFIRLSL4030PbFApplicationsHEXFET Power MOSFETl DC Motor DriveDl High Efficiency Synchronous Rectification in SMPSVDSS100Vl Uninterruptible Power SupplyRDS(on) typ.l High Speed Power Switching3.4ml Hard Switched and High Frequency CircuitsG max. 4.3mID 180ASBenefitsl Optimized for Logic Level Drivel Very Low RDS(ON) at 4.

 6.1. Size:287K  international rectifier
 irls4030-7ppbf.pdf pdf_icon

IRLS4030PBF

PD -97371IRLS4030-7PPbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.3.2ml Uninterruptible Power Supplyl High Speed Power SwitchingG max. 3.9ml Hard Switched and High Frequency CircuitsID 190ASBenefitsl Optimized for Logic Level DriveDl Very Low RDS(ON) at 4.5V VGSl

 6.2. Size:501K  infineon
 auirls4030 auirlsl4030.pdf pdf_icon

IRLS4030PBF

AUIRLS4030 AUTOMOTIVE GRADE AUIRLSL4030 Features HEXFET Power MOSFET Optimized for Logic Level Drive Advanced Process Technology D VDSS 100V Ultra Low On-Resistance RDS(on) typ. 3.4m Logic Level Gate Drive G175C Operating Temperature max 4.3mFast Switching S Repetitive Avalanche Allowed up to Tjmax ID

 6.3. Size:686K  infineon
 auirls4030-7p.pdf pdf_icon

IRLS4030PBF

AUTOMOTIVE GRADE AUIRLS4030-7P HEXFET Power MOSFET Features Optimized for Logic Level Drive VDSS 100V Advanced Process Technology RDS(on) typ. 3.2m Ultra Low On-Resistance Logic Level Gate Drive max. 3.9m 175C Operating Temperature ID 190A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl

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Keywords - IRLS4030PBF MOSFET datasheet

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