IRLS4030PBF MOSFET Datasheet: N-Ch, 100V, 180A. Full specification with pinout and replacement list

IRLS4030PBF Specs and Replacement

Type Designator: IRLS4030PBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 370 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 330 nS

Cossⓘ - Output Capacitance: 670 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: TO263

IRLS4030PBF substitution

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IRLS4030PBF datasheet

..1. Size:382K international rectifier
irls4030pbf irlsl4030pbf.pdf pdf_icon

PD - 97370 IRLS4030PbF IRLSL4030PbF Applications HEXFET Power MOSFET l DC Motor Drive D l High Efficiency Synchronous Rectification in SMPS VDSS 100V l Uninterruptible Power Supply RDS(on) typ. l High Speed Power Switching 3.4m l Hard Switched and High Frequency Circuits G max. 4.3m ID 180A S Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.... See More ⇒

6.1. Size:287K international rectifier
irls4030-7ppbf.pdf pdf_icon

PD -97371 IRLS4030-7PPbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 3.2m l Uninterruptible Power Supply l High Speed Power Switching G max. 3.9m l Hard Switched and High Frequency Circuits ID 190A S Benefits l Optimized for Logic Level Drive D l Very Low RDS(ON) at 4.5V VGS l... See More ⇒

6.2. Size:501K infineon
auirls4030 auirlsl4030.pdf pdf_icon

AUIRLS4030 AUTOMOTIVE GRADE AUIRLSL4030 Features HEXFET Power MOSFET Optimized for Logic Level Drive Advanced Process Technology D VDSS 100V Ultra Low On-Resistance RDS(on) typ. 3.4m Logic Level Gate Drive G 175 C Operating Temperature max 4.3m Fast Switching S Repetitive Avalanche Allowed up to Tjmax ID ... See More ⇒

6.3. Size:686K infineon
auirls4030-7p.pdf pdf_icon

AUTOMOTIVE GRADE AUIRLS4030-7P HEXFET Power MOSFET Features Optimized for Logic Level Drive VDSS 100V Advanced Process Technology RDS(on) typ. 3.2m Ultra Low On-Resistance Logic Level Gate Drive max. 3.9m 175 C Operating Temperature ID 190A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compl... See More ⇒