All MOSFET. IRLML0060TRPBF Datasheet

 

IRLML0060TRPBF Datasheet and Replacement


   Type Designator: IRLML0060TRPBF
   Marking Code: L*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 2.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.5 nC
   trⓘ - Rise Time: 6.3 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.092 Ohm
   Package: SOT23
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IRLML0060TRPBF Datasheet (PDF)

 ..1. Size:199K  international rectifier
irlml0060trpbf.pdf pdf_icon

IRLML0060TRPBF

PD - 97439AIRLML0060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 92 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)116 mIRLML0060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie

 ..2. Size:907K  cn vbsemi
irlml0060trpbf.pdf pdf_icon

IRLML0060TRPBF

IRLML0060TRPBFwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23

 5.1. Size:218K  international rectifier
irlml0060pbf.pdf pdf_icon

IRLML0060TRPBF

PD - 97439AIRLML0060TRPbFHEXFET Power MOSFETVDS60 VVGS Max 16 VRDS(on) max 92 m(@VGS = 10V)RDS(on) max Micro3TM (SOT-23)116 mIRLML0060TRPbF(@VGS = 4.5V)Application(s)Load/ System SwitchFeatures and BenefitsBenefitsFeaturesIndustry-standard pinout Multi-vendor compatibilityCompatible with existing Surface Mount Techniques results in Easie

 5.2. Size:422K  huashuo
irlml0060.pdf pdf_icon

IRLML0060TRPBF

IRLML0060 N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The IRLML0060 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),typ 80 m and efficiency for most of the small power switching and load switch applications. ID 3 A The IRLML0060 meet the RoHS and Green Product requirement with full function reliability a

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SVF10N80K | 2N7637-GA

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