IRLML2502PBF-1
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRLML2502PBF-1
Marking Code: G*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 4.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045
Ohm
Package:
SOT23
IRLML2502PBF-1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRLML2502PBF-1
Datasheet (PDF)
..1. Size:188K international rectifier
irlml2502pbf-1.pdf 
IRLML2502PbF-1HEXFET Power MOSFETVDS 20 VRDS(on) max G 10.045 (@V = 4.5V)GSQg (typical) 8.0 nC 3 DID 4.2 AS 2(@T = 25C)AMicro3(SOT-23)Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL
2.1. Size:187K international rectifier
irlml2502pbf.pdf
IRLML2502PbFHEXFET Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (
2.2. Size:198K infineon
irlml2502pbf.pdf
IRLML2502PbFHEXFET Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (
5.1. Size:120K international rectifier
irlml2502.pdf
PD - 93757BIRLML2502HEXFET Power MOSFET Ultra Low On-Resistance N-Channel MOSFETG 1 SOT-23 FootprintVDSS = 20V Low Profile (
5.2. Size:178K international rectifier
irlml2502gpbf.pdf
PD - 96163AIRLML2502GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (
5.3. Size:198K international rectifier
irlml2502trpbf.pdf
IRLML2502PbFHEXFET Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (
5.4. Size:593K shenzhen
irlml2502.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML2502 Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (
5.5. Size:148K tysemi
irlml2502.pdf
Product specificationIRLML2502PbFHEXFET Power MOSFETl Ultra Low On-Resistancel N-Channel MOSFETG 1l SOT-23 FootprintVDSS = 20Vl Low Profile (
5.6. Size:1435K kexin
irlml2502.pdf
SMD Type MOSFETN-Channel MOSFETIRLML2502 (KRLML2502)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features VDS (V) = 20V ID = 4.2 A1 2 RDS(ON) 45m (VGS = 4.5V)+0.1+0.050.95 -0.1 0.1 -0.01+0.1 RDS(ON) 80m (VGS = 2.5V)1.9 -0.1 Fast Switching1. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25
5.7. Size:1541K kexin
irlml2502-3.pdf
SMD Type MOSFETN-Channel MOSFETIRLML2502 (KRLML2502)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 4.2 A RDS(ON) 45m (VGS = 4.5V)1 2+0.02+0.1 RDS(ON) 80m (VGS = 2.5V) 0.15 -0.020.95 -0.1+0.11.9 -0.2 Fast Switching1. Gate2. Source3. DrainG 13 DS 2 Absolute Maximum Ratings Ta = 25
5.8. Size:729K umw-ic
irlml2502.pdf
RUMWUMW IRLML2502UMW IRLML2502UMW IRLML2502SOT-23 Plastic-Encapsulate MOSFETSN-Channel 20-V(D-S) MOSFET UMW IRLML2502ID SOT-23 V(BR)DSS RDS(on)MAX 45m@4.5V20V4.2A1. GATE 80 m@2.5V2. SOURCE 3. DRAIN FEA TURE APPLICATION Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit 1G MKMaximum ratin
5.9. Size:475K huashuo
irlml2502.pdf
IRLML2502 N-Ch 20V Fast Switching MOSFETs Product Summary Description The IRLML2502 is the high cell density VDS 20 V trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the RDS(ON),typ 30 m small power switching and load switch ID 3.6 A applications. The IRLML2502 meets the RoHS and Green Product requirement with full function reliabili
5.10. Size:595K cn yenji elec
irlml2502.pdf
IRLML2502N-Channel Enhancement-Mode MOSFETRoHS Device Halogen Free SOT-23 Featuresl Ultra Low On-ResistancelN-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (
5.11. Size:920K cn vbsemi
irlml2502trpbf.pdf
IRLML2502TRPBFwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC
5.12. Size:1532K cn vbsemi
irlml2502g.pdf
IRLML2502Gwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Con
5.13. Size:227K inchange semiconductor
irfirlml2502trpbf.pdf
isc N-Channel MOSFET Transistor IRFIRLML2502TRPBFFEATURESLow drain-source on-resistance:RDS(on) 45mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONProvides the designer with an extremely efficient and reliabledevice for use in battery and load management.ABSOLUTE MAXIM
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