IRLML5103PBF Datasheet and Replacement
Type Designator: IRLML5103PBF
Marking Code: D*
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 0.76 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 3.4 nC
tr ⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 37 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: SOT23
IRLML5103PBF substitution
IRLML5103PBF Datasheet (PDF)
irlml5103pbf.pdf

IRLML5103PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel P-Channel MOSFETG 1l SOT-23 FootprintVDSS = -30Vl Low Profile (
irlml2803pbf-1 irlml5103pbf-1.pdf

IRLML2803PbF-1HEXFET Power MOSFETVDS 30 VRDS(on) max G 10.25 (@V = 10V)GSQg (typical) 3.3 nC 3 DID 1.2 AS 2(@T = 25C)AMicro3Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Industr
irlml5103.pdf

PD - 9.1260DIRLML5103HEXFET Power MOSFET Generation V TechnologyD Ultra Low On-Resistance P-Channel MOSFET VDSS = -30V SOT-23 Footprint Low Profile (
irlml5103gpbf.pdf

PD - 96165AIRLML5103GPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceG 1l P-Channel MOSFETVDSS = -30Vl SOT-23 Footprint3 Dl Low Profile (
Datasheet: IRLML2402PBF-1 , IRLML2502GPBF , IRLML2502PBF , IRLML2502PBF-1 , IRLML2803GPBF , IRLML2803PBF-1 , IRLML2803PBF , IRLML5103GPBF , 75N75 , IRLML5103PBF-1 , IRLML5203GPBF , IRLML5203PBF , IRLML5203PBF-1 , IRLML6244TRPBF , IRLML6246TRPBF , IRLML6302GPBF , IRLML6302PBF .
History: NCEP01T13A
Keywords - IRLML5103PBF MOSFET datasheet
IRLML5103PBF cross reference
IRLML5103PBF equivalent finder
IRLML5103PBF lookup
IRLML5103PBF substitution
IRLML5103PBF replacement
History: NCEP01T13A



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