IRFW710B PDF and Equivalents Search

 

IRFW710B Specs and Replacement

Type Designator: IRFW710B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO263

IRFW710B substitution

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IRFW710B datasheet

 ..1. Size:667K  fairchild semi
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IRFW710B

November 2001 IRFW710B / IRFI710B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.7 nC) planar, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored t... See More ⇒

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IRFW710B

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IRFW710B

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IRFW710B

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Detailed specifications: IRLF120, IRFJ240, IRFV064, IRFV260, IRFV360, IRFV460, IRFW610B, IRFI630B, IRLZ44N, IRFI064, IRFI1010NPBF, IRFI1310NPBF, IRFI260, IRFI3205PBF, IRFI360, IRFI4110GPBF, IRFI4227PBF

Keywords - IRFW710B MOSFET specs

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