All MOSFET. IRFI530GPBF Datasheet

 

IRFI530GPBF MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFI530GPBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9.7 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 28 nS

Drain-Source Capacitance (Cd): 250 pF

Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm

Package: TO220F

IRFI530GPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFI530GPBF Datasheet (PDF)

1.1. irfi530g irfi530gpbf.pdf Size:932K _upd

IRFI530GPBF
IRFI530GPBF

IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) (Ω)VGS = 10 V 0.16 RoHS* COMPLIANT • Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 33 • 175 °C Operating Temperature Qgs (nC) 5.4 • Dynamic dV/dt Rating Qgd (nC) 15 • Low T

2.1. irfi530g.pdf Size:158K _international_rectifier

IRFI530GPBF
IRFI530GPBF

Document Number: 90180 www.vishay.com 575 Document Number: 90180 www.vishay.com 576 Document Number: 90180 www.vishay.com 577 Document Number: 90180 www.vishay.com 578 Document Number: 90180 www.vishay.com 579 Document Number: 90180 www.vishay.com 580 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of i

 3.1. irfi530n.pdf Size:133K _international_rectifier

IRFI530GPBF
IRFI530GPBF

PD - 9.1353A IRFI530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.11? Fully Avalanche Rated G ID = 12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-re

3.2. irfi530npbf.pdf Size:223K _international_rectifier

IRFI530GPBF
IRFI530GPBF

PD - 95419 IRFI530NPbF HEXFET® Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS … VDSS = 100V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated RDS(on) = 0.11Ω l Lead-Free G ID = 12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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