IRFI530GPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFI530GPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 42
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 9.7
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 33
nC
trⓘ - Rise Time: 28
nS
Cossⓘ -
Output Capacitance: 250
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16
Ohm
Package:
TO220F
IRFI530GPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFI530GPBF
Datasheet (PDF)
..1. Size:932K vishay
irfi530g irfi530gpbf sihfi530g.pdf 
IRFI530G, SiHFI530GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = 10 V 0.16RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 33 175 C Operating TemperatureQgs (nC) 5.4 Dynamic dV/dt RatingQgd (nC) 15 Low T
6.1. Size:158K international rectifier
irfi530g.pdf
Document Number: 90180 www.vishay.com575Document Number: 90180 www.vishay.com576Document Number: 90180 www.vishay.com577Document Number: 90180 www.vishay.com578Document Number: 90180 www.vishay.com579Document Number: 90180 www.vishay.com580Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as part o
6.2. Size:275K inchange semiconductor
irfi530g.pdf
iscN-Channel MOSFET Transistor IRFI530GFEATURESLow drain-source on-resistance:RDS(ON) =0.16 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
7.2. Size:133K international rectifier
irfi530n.pdf
PD - 9.1353AIRFI530NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.11 Fully Avalanche RatedGID = 12ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible
7.3. Size:223K international rectifier
irfi530npbf.pdf
PD - 95419IRFI530NPbFHEXFET Power MOSFETl Advanced Process Technologyl Isolated PackageDl High Voltage Isolation = 2.5KVRMS VDSS = 100Vl Sink to Lead Creepage Dist. = 4.8mml Fully Avalanche RatedRDS(on) = 0.11l Lead-Free GID = 12ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest
7.4. Size:501K infineon
irfi530npbf.pdf
IRFI530NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.11 Fully Avalanche Rated Lead-Free ID 12A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low
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