IRFI540G
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFI540G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 17
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 72
nC
trⓘ - Rise Time: 44
nS
Cossⓘ -
Output Capacitance: 560
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.077
Ohm
Package:
TO220F
IRFI540G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFI540G
Datasheet (PDF)
..1. Size:2156K international rectifier
irfi540gpbf.pdf 
PD - 94942IRFI540GPbF Lead-Free1/13/04Document Number: 91144 www.vishay.com1IRFI540GPbFDocument Number: 91144 www.vishay.com2IRFI540GPbFDocument Number: 91144 www.vishay.com3IRFI540GPbFDocument Number: 91144 www.vishay.com4IRFI540GPbFDocument Number: 91144 www.vishay.com5IRFI540GPbFDocument Number: 91144 www.vishay.com6IRFI540GPbFTO-220 Full-
..3. Size:1473K vishay
irfi540g sihfi540g.pdf
IRFI540G, SiHFI540GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.077 f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 72COMPLIANT 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 32 Low T
..4. Size:1475K vishay
irfi540g irfi540gpbf sihfi540g.pdf
IRFI540G, SiHFI540GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.077 f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 72COMPLIANT 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 32 Low T
..5. Size:1476K cn vbsemi
irfi540gpbf.pdf
IRFI540GPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.034 at VGS = 10 V10050aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDTO-220 FULLPAKGSSDGN-Channel MOSFETABSOLUTE MA
..6. Size:275K inchange semiconductor
irfi540g.pdf
iscN-Channel MOSFET Transistor IRFI540GFEATURESLow drain-source on-resistance:RDS(ON) =0.077 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
7.2. Size:262K international rectifier
irfi540npbf.pdf
PD - 94833IRFI540NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 100Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.052l Fully Avalanche RatedGl Lead-FreeID = 20ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowes
7.3. Size:131K international rectifier
irfi540n.pdf
PD - 9.1361APRELIMINARY IRFI540NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.052 Fully Avalanche RatedGID = 20ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible
7.4. Size:499K infineon
irfi540npbf.pdf
IRFI540NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.052 Fully Avalanche Rated Lead-Free ID 20A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo
7.5. Size:244K inchange semiconductor
irfi540n.pdf
isc N-Channel MOSFET Transistor IRFI540NFEATURESLow drain-source on-resistance:RDS(on) 52m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
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