All MOSFET. IRFW740B Datasheet

 

IRFW740B Datasheet and Replacement


   Type Designator: IRFW740B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 134 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.54 Ohm
   Package: TO263
 

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IRFW740B Datasheet (PDF)

 ..1. Size:679K  fairchild semi
 irfw740b irfi740b.pdf pdf_icon

IRFW740B

November 2001IRFW740B / IRFI740B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to

 7.1. Size:220K  1
 irfi740a irfw740a.pdf pdf_icon

IRFW740B

 7.2. Size:509K  samsung
 irfw740a.pdf pdf_icon

IRFW740B

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V2 Lower RDS(ON) : 0.437 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

 9.1. Size:117K  1
 irfi730a irfw730a.pdf pdf_icon

IRFW740B

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Datasheet: IRFI540G , IRFI540GPBF , IRFI540NPBF , IRFI610B , IRFI624GPBF , IRFI710B , IRFI734GPBF , IRFI740B , IRF9540N , IRFI744GPBF , IRFI7536GPBF , IRFI820GPBF , IRFI830GPBF , IRFI840GLCPBF , IRFI840GPBF , IRFI9520G , IRFI9520GPBF .

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