IRFI744GPBF Specs and Replacement
Type Designator: IRFI744GPBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 370 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.63 Ohm
Package: TO220F
IRFI744GPBF substitution
- MOSFET ⓘ Cross-Reference Search
IRFI744GPBF datasheet
irfi744gpbf.pdf
PD - 94855 IRFI744GPbF Lead-Free 11/19/03 Document Number 91157 www.vishay.com 1 IRFI744GPbF Document Number 91157 www.vishay.com 2 IRFI744GPbF Document Number 91157 www.vishay.com 3 IRFI744GPbF Document Number 91157 www.vishay.com 4 IRFI744GPbF Document Number 91157 www.vishay.com 5 IRFI744GPbF Document Number 91157 www.vishay.com 6 IRFI744GPbF Document Nu... See More ⇒
irfi744gpbf.pdf
IRFI744G, SiHFI744G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 450 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.63 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 80 Sink to Lead Creepage Dist. = 4.8 mm Qgs (nC) 12 Dynamic dV/dt Rating Qgd (nC) 41 Low Thermal Resistance Lead (Pb)-free Av... See More ⇒
irfi744g sihfi744g.pdf
IRFI744G, SiHFI744G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 450 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.63 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 80 Sink to Lead Creepage Dist. = 4.8 mm Qgs (nC) 12 Dynamic dV/dt Rating Qgd (nC) 41 Low Thermal Resistance Lead (Pb)-free Av... See More ⇒
Detailed specifications: IRFI540GPBF, IRFI540NPBF, IRFI610B, IRFI624GPBF, IRFI710B, IRFI734GPBF, IRFI740B, IRFW740B, K4145, IRFI7536GPBF, IRFI820GPBF, IRFI830GPBF, IRFI840GLCPBF, IRFI840GPBF, IRFI9520G, IRFI9520GPBF, IRFI9530GPBF
Keywords - IRFI744GPBF MOSFET specs
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