All MOSFET. IRFI9540GPBF Datasheet

 

IRFI9540GPBF Datasheet and Replacement


   Type Designator: IRFI9540GPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO220F
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IRFI9540GPBF Datasheet (PDF)

 4.1. Size:2870K  cn vbsemi
 irfi9540gp.pdf pdf_icon

IRFI9540GPBF

IRFI9540GPwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.220 at VGS = - 10 V - 12 TrenchFET Power MOSFET- 100 11.70.230 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch DC/DC C

 5.1. Size:284K  international rectifier
 irfi9540g.pdf pdf_icon

IRFI9540GPBF

PD - 95609IRFI9540GPbF Lead-Free7/29/03Document Number: 91164 www.vishay.com1IRFI9540GPbFDocument Number: 91164 www.vishay.com2IRFI9540GPbFDocument Number: 91164 www.vishay.com3IRFI9540GPbFDocument Number: 91164 www.vishay.com4IRFI9540GPbFDocument Number: 91164 www.vishay.com5IRFI9540GPbFDocument Number: 91164 www.vishay.com6IRFI9540GPbFPeak

 5.2. Size:944K  vishay
 irfi9540g-pbf sihfi9540g.pdf pdf_icon

IRFI9540GPBF

IRFI9540G, SiHFI9540GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.20RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 61 COMPLIANT P-ChannelQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Dynamic dV/dt

 5.3. Size:943K  vishay
 irfi9540g sihfi9540g.pdf pdf_icon

IRFI9540GPBF

IRFI9540G, SiHFI9540GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.20RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 61 COMPLIANT P-ChannelQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Dynamic dV/dt

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History: MXP84D7AT | TPC8058-H | MTB55N06Q8 | IRF7470TRPBF-10 | BUZ332A | IXTH200N085T | IRFM054

Keywords - IRFI9540GPBF MOSFET datasheet

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