IRFI9Z24GPBF MOSFET Datasheet: P-Ch, 60V, 8.5A. Full specification with pinout and replacement list

IRFI9Z24GPBF Specs and Replacement

Type Designator: IRFI9Z24GPBF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO220F

IRFI9Z24GPBF substitution

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IRFI9Z24GPBF datasheet

..1. Size:1774K international rectifier
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PD- 95976 IRFI9Z24GPbF Lead-Free 12/20/04 Document Number 91171 www.vishay.com 1 IRFI9Z24GPbF Document Number 91171 www.vishay.com 2 IRFI9Z24GPbF Document Number 91171 www.vishay.com 3 IRFI9Z24GPbF Document Number 91171 www.vishay.com 4 IRFI9Z24GPbF Document Number 91171 www.vishay.com 5 IRFI9Z24GPbF Document Number 91171 www.vishay.com 6 IRFI9Z24GPbF Peak ... See More ⇒

5.1. Size:169K international rectifier
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5.2. Size:1485K vishay
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IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.28 RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 19 P-Channel Qgs (nC) 5.4 175 C Operating Temperature Qgd (nC) 11 Dynamic dV/dt... See More ⇒

5.3. Size:1483K vishay
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