IRFI9Z24GPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFI9Z24GPBF
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 37
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 8.5
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 68
nS
Cossⓘ -
Output Capacitance: 360
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28
Ohm
Package:
TO220F
IRFI9Z24GPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFI9Z24GPBF
Datasheet (PDF)
..1. Size:1774K international rectifier
irfi9z24gpbf.pdf
PD- 95976IRFI9Z24GPbF Lead-Free12/20/04Document Number: 91171 www.vishay.com1IRFI9Z24GPbFDocument Number: 91171 www.vishay.com2IRFI9Z24GPbFDocument Number: 91171 www.vishay.com3IRFI9Z24GPbFDocument Number: 91171 www.vishay.com4IRFI9Z24GPbFDocument Number: 91171 www.vishay.com5IRFI9Z24GPbFDocument Number: 91171 www.vishay.com6IRFI9Z24GPbFPeak
5.2. Size:1485K vishay
irfi9z24g-pbf sihfi9z24g.pdf
IRFI9Z24G, SiHFI9Z24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.28RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 19 P-ChannelQgs (nC) 5.4 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt
5.3. Size:1483K vishay
irfi9z24g sihfi9z24g.pdf
IRFI9Z24G, SiHFI9Z24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.28RoHS* Sink to Lead Creepage Distance = 4.8 mm COMPLIANTQg (Max.) (nC) 19 P-ChannelQgs (nC) 5.4 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt
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