IRFI9Z34GPBF MOSFET Datasheet: P-Ch, 60V, 12A. Full specification with pinout and replacement list

IRFI9Z34GPBF Specs and Replacement

   Type Designator: IRFI9Z34GPBF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 620 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO220F

IRFI9Z34GPBF substitution

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IRFI9Z34GPBF datasheet

5.1. Size:911K international rectifier
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PD - 94866 IRFI9Z34GPbF Lead-Free 12/04/03 Document Number 91172 www.vishay.com 1 IRFI9Z34GPbF Document Number 91172 www.vishay.com 2 IRFI9Z34GPbF Document Number 91172 www.vishay.com 3 IRFI9Z34GPbF Document Number 91172 www.vishay.com 4 IRFI9Z34GPbF Document Number 91172 www.vishay.com 5 IRFI9Z34GPbF Document Number 91172 www.vishay.com 6 IRFI9Z34GPbF TO-2... See More ⇒

5.2. Size:1417K vishay
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IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.14 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 34 COMPLIANT P-Channel Qgs (nC) 9.9 175 C Operating Temperature Qgd (nC) 16 Dynamic dV/... See More ⇒

5.3. Size:1415K vishay
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