IRL510S
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL510S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 43
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 5.6
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 6.1
nC
trⓘ - Rise Time: 47
nS
Cossⓘ -
Output Capacitance: 80
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.54
Ohm
Package:
TO263
IRL510S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL510S
Datasheet (PDF)
..1. Size:163K international rectifier
irl510s.pdf 
Document Number: 90380 www.vishay.com1313Document Number: 90380 www.vishay.com1314Document Number: 90380 www.vishay.com1315Document Number: 90380 www.vishay.com1316Document Number: 90380 www.vishay.com1317Document Number: 90380 www.vishay.com1318Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as
..2. Size:272K vishay
irl510s sihl510s.pdf
IRL510S, SiHL510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.6 Logic-Level Gate DriveQgd (nC) 3.3 RDS(on) Specified at VGS = 4
..3. Size:297K vishay
irl510spbf sihl510s.pdf
IRL510S, SiHL510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.6 Logic-Level Gate DriveQgd (nC) 3.3 RDS(on) Specified at VGS = 4
8.1. Size:227K international rectifier
irl510pbf.pdf
PD - 95406IRL510PbF Lead-Free6/17/04Document Number: 91297 www.vishay.com1IRL510PbFDocument Number: 91297 www.vishay.com2IRL510PbFDocument Number: 91297 www.vishay.com3IRL510PbFDocument Number: 91297 www.vishay.com4IRL510PbFDocument Number: 91297 www.vishay.com5IRL510PbFDocument Number: 91297 www.vishay.com6IRL510PbFTO-220AB Package Outline
8.3. Size:242K fairchild semi
irl510a.pdf
IRL510AFEATURESBVDSS = 100 V Logic-Level Gate DriveRDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 5.6 A Lower Input Capacitance Improved Gate ChargeTO-220 Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.336 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maxi
8.4. Size:885K samsung
irl510a.pdf
Advanced Power MOSFETFEATURESBVDSS = 100 V Logic-Level Gate DriveRDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 5.6 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.336 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rating
8.5. Size:1077K vishay
irl510pbf sihl510.pdf
IRL510, SiHL510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.6 175 C Operating TemperatureQgd (nC) 3.3 Fast SwitchingConfiguration Si
8.6. Size:1074K vishay
irl510 sihl510.pdf
IRL510, SiHL510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.6 175 C Operating TemperatureQgd (nC) 3.3 Fast SwitchingConfiguration Si
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