All MOSFET. IRFN9130SMD Datasheet

 

IRFN9130SMD MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFN9130SMD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30(max) nC
   trⓘ - Rise Time: 140(max) nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: SMD1

 IRFN9130SMD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFN9130SMD Datasheet (PDF)

 ..1. Size:21K  1
 irfn9130smd.pdf

IRFN9130SMD IRFN9130SMD

IRFN9130SMDMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS -100VID(cont) -9.3A RDS(on) 0.31FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS

 0.1. Size:21K  semelab
 irfn9130smd05.pdf

IRFN9130SMD IRFN9130SMD

IRF9130SMD05NIRFN9130SMD05MECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS -100VID(cont) -8A RDS(on) 0.35FEATURES HERMETICALLY SEALED

 6.1. Size:21K  1
 irfn9130.pdf

IRFN9130SMD IRFN9130SMD

IRFN9130MECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS -100VID(cont) -11A RDS(on) 0.3FEATURES HERMETICALLY SEALED SIMPLE DRIVE

 8.1. Size:23K  1
 irfn9140smd.pdf

IRFN9130SMD IRFN9130SMD

IRFN9140SMDMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET VDSS 100V ID(cont) 14A RDS(on) 0.020FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

 8.2. Size:171K  international rectifier
 irfn9140.pdf

IRFN9130SMD IRFN9130SMD

PD - 91553DIRFN9140JANTX2N7236UJANTXV2N7236UREF:MIL-PRF-19500/595POWER MOSFET 100V, P-CHANNELSURFACE MOUNT(SMD-1)HEXFET MOSFET TECHNOLOGYProduct Summary Part Number RDS(on) IDIRFN9140 0.20 -18AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheSMD-1efficient geometry design achieves very low on-s

Datasheet: IRFN150 , IRFN240 , IRFN250 , IRFN340 , IRFN350 , IRFN440 , IRFN450 , IRFN9130 , SKD502T , IRFN9140 , IRFN9140SMD , IRFN9240 , IRFP044 , IRFP044N , IRFP048 , IRFP048N , IRFP054 .

 

 
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