IRL3705NLPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL3705NLPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 170 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 16 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 89 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 98 nC
Rise Time (tr): 140 nS
Drain-Source Capacitance (Cd): 870 pF
Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
Package: TO262
IRL3705NLPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL3705NLPBF Datasheet (PDF)
0.1. irl3705nspbf irl3705nlpbf.pdf 
Size:297K _international_rectifier
PD - 95381IRL3705NSPbFl Logic-Level Gate DriveIRL3705NLPbFl Advanced Process Technologyl Surface Mount (IRL3705NS) HEXFET Power MOSFETl Low-profile through-hole (IRL3705NL)Dl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.01l Lead-FreeGDescriptionFifth Generation HEXFETs from International RectifierID = 89AS
5.1. irl3705nl.pdf Size:213K _inchange_semiconductor
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRL3705NLFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor controlDC DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
6.1. irl3705ns.pdf Size:186K _international_rectifier
PD - 91502CIRL3705NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRL3705NS) Low-profile through-hole (IRL3705NL) 175C Operating TemperatureRDS(on) = 0.01 Fast SwitchingG Fully Avalanche RatedID = 89A DescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniq
6.2. irl3705n.pdf Size:106K _international_rectifier
PD - 9.1370CIRL3705NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.01 Fast SwitchingG Fully Avalanche RatedID = 89A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe
6.3. irl3705npbf.pdf Size:481K _international_rectifier
PD - 94960IRL3705NPbF Lead-Freewww.irf.com 1 IRL3705NPbF2 www.irf.comIRL3705NPbFwww.irf.com 3IRL3705NPbF4 www.irf.comIRL3705NPbFwww.irf.com 5IRL3705NPbF6 www.irf.comIRL3705NPbFPeak Diode Recovery dv/dt Test Circuit *
6.4. irl3705ns.pdf Size:252K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRL3705NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
6.5. irl3705n.pdf Size:251K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL3705N IIRL3705NFEATURESStatic drain-source on-resistance:RDS(on) 10mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
