All MOSFET. IRL3705NSPBF Datasheet

 

IRL3705NSPBF MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRL3705NSPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 89 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 98 nC
   trⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 870 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO263

 IRL3705NSPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRL3705NSPBF Datasheet (PDF)

 ..1. Size:297K  international rectifier
irl3705nspbf irl3705nlpbf.pdf

IRL3705NSPBF
IRL3705NSPBF

PD - 95381IRL3705NSPbFl Logic-Level Gate DriveIRL3705NLPbFl Advanced Process Technologyl Surface Mount (IRL3705NS) HEXFET Power MOSFETl Low-profile through-hole (IRL3705NL)Dl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.01l Lead-FreeGDescriptionFifth Generation HEXFETs from International RectifierID = 89AS

 5.1. Size:186K  international rectifier
irl3705ns irl3705nl.pdf

IRL3705NSPBF
IRL3705NSPBF

PD - 91502CIRL3705NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRL3705NS) Low-profile through-hole (IRL3705NL) 175C Operating TemperatureRDS(on) = 0.01 Fast SwitchingG Fully Avalanche RatedID = 89A DescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniq

 5.2. Size:252K  inchange semiconductor
irl3705ns.pdf

IRL3705NSPBF
IRL3705NSPBF

isc N-Channel MOSFET Transistor IRL3705NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 6.1. Size:481K  international rectifier
irl3705npbf.pdf

IRL3705NSPBF
IRL3705NSPBF

PD - 94960IRL3705NPbF Lead-Freewww.irf.com 1 IRL3705NPbF2 www.irf.comIRL3705NPbFwww.irf.com 3IRL3705NPbF4 www.irf.comIRL3705NPbFwww.irf.com 5IRL3705NPbF6 www.irf.comIRL3705NPbFPeak Diode Recovery dv/dt Test Circuit *

 6.2. Size:1024K  international rectifier
auirl3705n.pdf

IRL3705NSPBF
IRL3705NSPBF

PD - 96352AUTOMOTIVE GRADEAUIRL3705NFeaturesHEXFET Power MOSFET Advanced Planar TechnologyD Logic-Level Gate DriveV(BR)DSS55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.01 Fast SwitchingG Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxID S 89A Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSSp

 6.3. Size:106K  international rectifier
irl3705n.pdf

IRL3705NSPBF
IRL3705NSPBF

PD - 9.1370CIRL3705NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.01 Fast SwitchingG Fully Avalanche RatedID = 89A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

 6.4. Size:481K  infineon
irl3705npbf.pdf

IRL3705NSPBF
IRL3705NSPBF

PD - 94960IRL3705NPbF Lead-Freewww.irf.com 1 IRL3705NPbF2 www.irf.comIRL3705NPbFwww.irf.com 3IRL3705NPbF4 www.irf.comIRL3705NPbFwww.irf.com 5IRL3705NPbF6 www.irf.comIRL3705NPbFPeak Diode Recovery dv/dt Test Circuit *

 6.5. Size:213K  inchange semiconductor
irl3705nl.pdf

IRL3705NSPBF
IRL3705NSPBF

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRL3705NLFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor controlDC DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

 6.6. Size:251K  inchange semiconductor
irl3705n.pdf

IRL3705NSPBF
IRL3705NSPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL3705N IIRL3705NFEATURESStatic drain-source on-resistance:RDS(on) 10mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Datasheet: IRL3714S , IRL3714SPBF , IRL3714ZL , IRL3714ZLPBF , IRL3714ZPBF , IRL3714ZSPBF , IRL3705NLPBF , IRL3705NPBF , HY1906P , IRL3705ZLPBF , IRL3705ZPBF , IRL3705ZSPBF , IRL3713L , IRL3713PBF , IRL3713SPBF , IRL3502PBF , IRL3502SPBF .

History: RCX050N25 | NCE60P82AD

 

 
Back to Top