IRL3705NSPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL3705NSPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 89 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 98 nC
trⓘ - Rise Time: 140 nS
Cossⓘ - Output Capacitance: 870 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO263
IRL3705NSPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL3705NSPBF Datasheet (PDF)
irl3705nspbf irl3705nlpbf.pdf
PD - 95381IRL3705NSPbFl Logic-Level Gate DriveIRL3705NLPbFl Advanced Process Technologyl Surface Mount (IRL3705NS) HEXFET Power MOSFETl Low-profile through-hole (IRL3705NL)Dl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.01l Lead-FreeGDescriptionFifth Generation HEXFETs from International RectifierID = 89AS
irl3705ns irl3705nl.pdf
PD - 91502CIRL3705NS/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 55V Surface Mount (IRL3705NS) Low-profile through-hole (IRL3705NL) 175C Operating TemperatureRDS(on) = 0.01 Fast SwitchingG Fully Avalanche RatedID = 89A DescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniq
irl3705ns.pdf
isc N-Channel MOSFET Transistor IRL3705NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
irl3705npbf.pdf
PD - 94960IRL3705NPbF Lead-Freewww.irf.com 1 IRL3705NPbF2 www.irf.comIRL3705NPbFwww.irf.com 3IRL3705NPbF4 www.irf.comIRL3705NPbFwww.irf.com 5IRL3705NPbF6 www.irf.comIRL3705NPbFPeak Diode Recovery dv/dt Test Circuit *
auirl3705n.pdf
PD - 96352AUTOMOTIVE GRADEAUIRL3705NFeaturesHEXFET Power MOSFET Advanced Planar TechnologyD Logic-Level Gate DriveV(BR)DSS55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.01 Fast SwitchingG Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxID S 89A Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSSp
irl3705n.pdf
PD - 9.1370CIRL3705NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.01 Fast SwitchingG Fully Avalanche RatedID = 89A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe
irl3705npbf.pdf
PD - 94960IRL3705NPbF Lead-Freewww.irf.com 1 IRL3705NPbF2 www.irf.comIRL3705NPbFwww.irf.com 3IRL3705NPbF4 www.irf.comIRL3705NPbFwww.irf.com 5IRL3705NPbF6 www.irf.comIRL3705NPbFPeak Diode Recovery dv/dt Test Circuit *
irl3705nl.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRL3705NLFEATURESLow power lossHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsMotor controlDC DC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
irl3705n.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL3705N IIRL3705NFEATURESStatic drain-source on-resistance:RDS(on) 10mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
Datasheet: IRL3714S , IRL3714SPBF , IRL3714ZL , IRL3714ZLPBF , IRL3714ZPBF , IRL3714ZSPBF , IRL3705NLPBF , IRL3705NPBF , HY1906P , IRL3705ZLPBF , IRL3705ZPBF , IRL3705ZSPBF , IRL3713L , IRL3713PBF , IRL3713SPBF , IRL3502PBF , IRL3502SPBF .
History: RCX050N25 | NCE60P82AD
History: RCX050N25 | NCE60P82AD
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