IRFN9140 Datasheet. Specs and Replacement

Type Designator: IRFN9140  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 max nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: SMD1

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IRFN9140 datasheet

 ..1. Size:171K  international rectifier
 irfn9140.pdf pdf_icon

IRFN9140

PD - 91553D IRFN9140 JANTX2N7236U JANTXV2N7236U REF MIL-PRF-19500/595 POWER MOSFET 100V, P-CHANNEL SURFACE MOUNT(SMD-1) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN9140 0.20 -18A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The SMD-1 efficient geometry design achieves very low on-s... See More ⇒

 0.1. Size:23K  1
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IRFN9140

IRFN9140SMD MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET VDSS 100V ID(cont) 14A RDS(on) 0.020 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS ... See More ⇒

 8.1. Size:21K  1
 irfn9130smd.pdf pdf_icon

IRFN9140

IRFN9130SMD MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET FOR HI REL APPLICATIONS VDSS -100V ID(cont) -9.3A RDS(on) 0.31 FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS ... See More ⇒

 8.2. Size:21K  1
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IRFN9140

IRFN9130 MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET FOR HI REL APPLICATIONS VDSS -100V ID(cont) -11A RDS(on) 0.3 FEATURES HERMETICALLY SEALED SIMPLE DRIVE... See More ⇒

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Detailed specifications: IRFN240, IRFN250, IRFN340, IRFN350, IRFN440, IRFN450, IRFN9130, IRFN9130SMD, STF13NM60N, IRFN9140SMD, IRFN9240, IRFP044, IRFP044N, IRFP048, IRFP048N, IRFP054, IRFP054N

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