IRFN9140 Datasheet and Replacement
Type Designator: IRFN9140
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 85(max) nS
Cossⓘ - Output Capacitance: 600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: SMD1
IRFN9140 substitution
IRFN9140 Datasheet (PDF)
irfn9140.pdf
PD - 91553DIRFN9140JANTX2N7236UJANTXV2N7236UREF:MIL-PRF-19500/595POWER MOSFET 100V, P-CHANNELSURFACE MOUNT(SMD-1)HEXFET MOSFET TECHNOLOGYProduct Summary Part Number RDS(on) IDIRFN9140 0.20 -18AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheSMD-1efficient geometry design achieves very low on-s
irfn9140smd.pdf
IRFN9140SMDMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET VDSS 100V ID(cont) 14A RDS(on) 0.020FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS
irfn9130smd.pdf
IRFN9130SMDMECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS -100VID(cont) -9.3A RDS(on) 0.31FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS
irfn9130.pdf
IRFN9130MECHANICAL DATADimensions in mm (inches)PCHANNELPOWER MOSFET FOR HIREL APPLICATIONS VDSS -100VID(cont) -11A RDS(on) 0.3FEATURES HERMETICALLY SEALED SIMPLE DRIVE
Datasheet: IRFN240 , IRFN250 , IRFN340 , IRFN350 , IRFN440 , IRFN450 , IRFN9130 , IRFN9130SMD , SI2302 , IRFN9140SMD , IRFN9240 , IRFP044 , IRFP044N , IRFP048 , IRFP048N , IRFP054 , IRFP054N .
History: SQD100N04-3M6
Keywords - IRFN9140 MOSFET datasheet
IRFN9140 cross reference
IRFN9140 equivalent finder
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IRFN9140 substitution
IRFN9140 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SQD100N04-3M6
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