All MOSFET. IRL1104LPBF Datasheet

 

IRL1104LPBF Datasheet and Replacement


   Type Designator: IRL1104LPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 104 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 257 nS
   Cossⓘ - Output Capacitance: 1065 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO262
      - MOSFET Cross-Reference Search

 

IRL1104LPBF Datasheet (PDF)

 ..1. Size:226K  international rectifier
 irl1104lpbf irl1104spbf.pdf pdf_icon

IRL1104LPBF

PD -95576IRL1104SPbFIRL1104LPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL1104S) DVDSS = 40Vl Low-profile through-hole (IRL1104L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier util

 6.1. Size:141K  international rectifier
 irl1104l irl1104s.pdf pdf_icon

IRL1104LPBF

PD -91840PRELIMINARYIRL1104S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175C Operating Temperature RDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processin

 7.1. Size:167K  international rectifier
 irl1104pbf.pdf pdf_icon

IRL1104LPBF

PD - 95404IRL1104PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 40Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche Ratedl Lead-Free ID = 104ASDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced

 7.2. Size:95K  international rectifier
 irl1104.pdf pdf_icon

IRL1104LPBF

PD -91805IRL1104HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.008G Fast Switching Fully Avalanche RatedID = 104AUSDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to

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History: 7NM70G-TM3-T | IRFZ48RS | IXTH13N80 | 23N50 | WSD30L30DN | FTK3022 | IPI47N10S-33

Keywords - IRL1104LPBF MOSFET datasheet

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