IRL1104LPBF MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL1104LPBF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 104 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 68 nC
trⓘ - Rise Time: 257 nS
Cossⓘ - Output Capacitance: 1065 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO262
IRL1104LPBF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL1104LPBF Datasheet (PDF)
irl1104lpbf irl1104spbf.pdf
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PD -95576IRL1104SPbFIRL1104LPbFl Logic-Level Gate DriveHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRL1104S) DVDSS = 40Vl Low-profile through-hole (IRL1104L)l 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche RatedID = 104Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier util
irl1104l irl1104s.pdf
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PD -91840PRELIMINARYIRL1104S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175C Operating Temperature RDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processin
irl1104pbf.pdf
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PD - 95404IRL1104PbFHEXFET Power MOSFETl Logic-Level Gate Drivel Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 40Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 0.008l Fast SwitchingGl Fully Avalanche Ratedl Lead-Free ID = 104ASDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced
irl1104.pdf
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PD -91805IRL1104HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.008G Fast Switching Fully Avalanche RatedID = 104AUSDescriptionFifth Generation HEXFET power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to
irl1104s.pdf
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PD -91840PRELIMINARYIRL1104S/LHEXFET Power MOSFET Logic-Level Gate Drive Advanced Process TechnologyDVDSS = 40V Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175C Operating Temperature RDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 104A SDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processin
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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