IRL2703SPBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL2703SPBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 45
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 24
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 140
nS
Cossⓘ -
Output Capacitance: 210
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
TO263
IRL2703SPBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL2703SPBF
Datasheet (PDF)
..1. Size:1187K international rectifier
irl2703spbf.pdf
PD- 95586IRL2703SPbF Lead-Freewww.irf.com 107/20/04IRL2703SPbF2 www.irf.comIRL2703SPbFwww.irf.com 3IRL2703SPbF4 www.irf.comIRL2703SPbFwww.irf.com 5IRL2703SPbF6 www.irf.comIRL2703SPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Transformer-+
6.1. Size:134K international rectifier
irl2703s.pdf
PD - 9.1360IRL2703SPRELIMINARYHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.04 Fast SwitchingG Fully Avalanche RatedID = 24ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible
7.1. Size:217K international rectifier
irl2703pbf.pdf
PD - 95368IRL2703PbF Lead-Freewww.irf.com 16/17/04IRL2703PbF2 www.irf.comIRL2703PbFwww.irf.com 3IRL2703PbF4 www.irf.comIRL2703PbFwww.irf.com 5IRL2703PbF6 www.irf.comIRL2703PbFwww.irf.com 7IRL2703PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13
7.2. Size:108K international rectifier
irl2703.pdf
PD - 9.1359AIRL2703HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 30V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.04 Fast SwitchingG Fully Avalanche RatedID = 24ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistanc
7.3. Size:217K infineon
irl2703pbf.pdf
PD - 95368IRL2703PbF Lead-Freewww.irf.com 16/17/04IRL2703PbF2 www.irf.comIRL2703PbFwww.irf.com 3IRL2703PbF4 www.irf.comIRL2703PbFwww.irf.com 5IRL2703PbF6 www.irf.comIRL2703PbFwww.irf.com 7IRL2703PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13
7.4. Size:251K inchange semiconductor
irl2703.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL2703 IIRL2703FEATURESStatic drain-source on-resistance:RDS(on) 0.04Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
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