IRL2910PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL2910PBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 200
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 55
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 90
nC
trⓘ - Rise Time: 100
nS
Cossⓘ -
Output Capacitance: 630
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026
Ohm
Package:
TO220AB
IRL2910PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL2910PBF
Datasheet (PDF)
..1. Size:1541K international rectifier
irl2910pbf.pdf 
PD - 94993IRL2910PbF Lead-Freewww.irf.com 12/10/04IRL2910PbF2 www.irf.comIRL2910PbFwww.irf.com 3IRL2910PbF4 www.irf.comIRL2910PbFwww.irf.com 5IRL2910PbF6 www.irf.comIRL2910PbFwww.irf.com 7IRL2910PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13
..2. Size:1541K infineon
irl2910pbf.pdf
PD - 94993IRL2910PbF Lead-Freewww.irf.com 12/10/04IRL2910PbF2 www.irf.comIRL2910PbFwww.irf.com 3IRL2910PbF4 www.irf.comIRL2910PbFwww.irf.com 5IRL2910PbF6 www.irf.comIRL2910PbFwww.irf.com 7IRL2910PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13
..3. Size:801K cn vbsemi
irl2910pbf.pdf
IRL2910PBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.018 at VGS = 10 V10070aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGG D SSTop ViewN-Channel MOSFETABSOLUTE
7.1. Size:682K international rectifier
irl2910spbf irl2910lpbf.pdf
PD - 95149IRL2910S/LPbFHEXFET Power MOSFET Logic-Level Gate Drive Surface MountD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.026 Fast SwitchingG Fully Avalanche RatedID = 55A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveext
7.2. Size:146K international rectifier
irl2910n.pdf
PD 9.1375IRL2910PRELIMINARYHEXFET Power MOSFETLogic-Level Gate DriveAdvanced Process TechnologyVDSS = 100VUltra Low On-ResistanceDynamic dv/dt RatingRDS(on) = 0.026175C Operating TemperatureFast SwitchingID = 48AFully Avalanche RatedDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely l
7.3. Size:194K international rectifier
irl2910s irl2910l.pdf
PD - 91376BIRL2910S/LHEXFET Power MOSFET Logic-Level Gate DriveD Surface MountVDSS = 100V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.026 Dynamic dv/dt RatingG Fast Switching Fully Avalanche RatedID = 55ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-
7.4. Size:124K international rectifier
irl2910.pdf
PD - 91375BIRL2910HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.026 175C Operating TemperatureG Fast SwitchingID = 55A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextrem
7.5. Size:684K infineon
irl2910spbf irl2910lpbf.pdf
PD - 95149IRL2910S/LPbFHEXFET Power MOSFET Logic-Level Gate Drive Surface MountD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.026 Fast SwitchingG Fully Avalanche RatedID = 55A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveext
7.6. Size:256K inchange semiconductor
irl2910l.pdf
Isc N-Channel MOSFET Transistor IRL2910LFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
7.7. Size:258K inchange semiconductor
irl2910s.pdf
Isc N-Channel MOSFET Transistor IRL2910SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
7.8. Size:244K inchange semiconductor
irl2910.pdf
isc N-Channel MOSFET Transistor IRL2910IIRL2910FEATURESStatic drain-source on-resistance:RDS(on) 0.026Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
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