IRFP044 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP044
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 57 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 95(max) nC
trⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 1200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO247AC
IRFP044 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP044 Datasheet (PDF)
irfp044pbf.pdf
PD- 95669IRFP044PbF Lead-Free8/2/04Document Number: 91197 www.vishay.com1IRFP044PbFDocument Number: 91197 www.vishay.com2IRFP044PbFDocument Number: 91197 www.vishay.com3IRFP044PbFDocument Number: 91197 www.vishay.com4IRFP044PbFDocument Number: 91197 www.vishay.com5IRFP044PbFDocument Number: 91197 www.vishay.com6IRFP044PbFPeak Diode Recovery d
irfp044pbf.pdf
IRFP044, SiHFP044Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.028RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 95 Fast SwitchingQgs (nC) 27 Ease of ParallelingQgd (nC) 46 Simple Drive RequirementsConfiguration Single Lead
irfp044npbf.pdf
PD- 95421IRFP044NPbF Lead-Freewww.irf.com 106/14/04IRFP044NPbF2 www.irf.comIRFP044NPbFwww.irf.com 3IRFP044NPbF4 www.irf.comIRFP044NPbFwww.irf.com 5IRFP044NPbF6 www.irf.comIRFP044NPbFwww.irf.com 7IRFP044NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH AS
irfp044n.pdf
PD - 9.1410AIRFP044NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.020 Fully Avalanche RatedGID = 53ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This bene
irfp044npbf.pdf
PD- 95421IRFP044NPbF Lead-Freewww.irf.com 106/14/04IRFP044NPbF2 www.irf.comIRFP044NPbFwww.irf.com 3IRFP044NPbF4 www.irf.comIRFP044NPbFwww.irf.com 5IRFP044NPbF6 www.irf.comIRFP044NPbFwww.irf.com 7IRFP044NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH AS
irfp044n.pdf
isc N-Channel MOSFET Transistor IRFP044NIIRFP044NFEATURESStatic drain-source on-resistance:RDS(on)20mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc
Datasheet: IRFN350 , IRFN440 , IRFN450 , IRFN9130 , IRFN9130SMD , IRFN9140 , IRFN9140SMD , IRFN9240 , STP65NF06 , IRFP044N , IRFP048 , IRFP048N , IRFP054 , IRFP054N , IRFP064 , IRFP064N , IRFP130 .
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