All MOSFET. IRFP044 Datasheet

 

IRFP044 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFP044
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 57 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 95(max) nC
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TO247AC

 IRFP044 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP044 Datasheet (PDF)

 ..1. Size:1782K  international rectifier
irfp044pbf.pdf

IRFP044
IRFP044

PD- 95669IRFP044PbF Lead-Free8/2/04Document Number: 91197 www.vishay.com1IRFP044PbFDocument Number: 91197 www.vishay.com2IRFP044PbFDocument Number: 91197 www.vishay.com3IRFP044PbFDocument Number: 91197 www.vishay.com4IRFP044PbFDocument Number: 91197 www.vishay.com5IRFP044PbFDocument Number: 91197 www.vishay.com6IRFP044PbFPeak Diode Recovery d

 ..2. Size:170K  international rectifier
irfp044.pdf

IRFP044
IRFP044

 ..3. Size:1977K  vishay
irfp044pbf.pdf

IRFP044
IRFP044

IRFP044, SiHFP044Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.028RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 95 Fast SwitchingQgs (nC) 27 Ease of ParallelingQgd (nC) 46 Simple Drive RequirementsConfiguration Single Lead

 0.1. Size:1541K  international rectifier
irfp044npbf.pdf

IRFP044
IRFP044

PD- 95421IRFP044NPbF Lead-Freewww.irf.com 106/14/04IRFP044NPbF2 www.irf.comIRFP044NPbFwww.irf.com 3IRFP044NPbF4 www.irf.comIRFP044NPbFwww.irf.com 5IRFP044NPbF6 www.irf.comIRFP044NPbFwww.irf.com 7IRFP044NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH AS

 0.2. Size:105K  international rectifier
irfp044n.pdf

IRFP044
IRFP044

PD - 9.1410AIRFP044NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.020 Fully Avalanche RatedGID = 53ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This bene

 0.3. Size:1541K  infineon
irfp044npbf.pdf

IRFP044
IRFP044

PD- 95421IRFP044NPbF Lead-Freewww.irf.com 106/14/04IRFP044NPbF2 www.irf.comIRFP044NPbFwww.irf.com 3IRFP044NPbF4 www.irf.comIRFP044NPbFwww.irf.com 5IRFP044NPbF6 www.irf.comIRFP044NPbFwww.irf.com 7IRFP044NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH AS

 0.4. Size:241K  inchange semiconductor
irfp044n.pdf

IRFP044
IRFP044

isc N-Channel MOSFET Transistor IRFP044NIIRFP044NFEATURESStatic drain-source on-resistance:RDS(on)20mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

Datasheet: IRFN350 , IRFN440 , IRFN450 , IRFN9130 , IRFN9130SMD , IRFN9140 , IRFN9140SMD , IRFN9240 , STP65NF06 , IRFP044N , IRFP048 , IRFP048N , IRFP054 , IRFP054N , IRFP064 , IRFP064N , IRFP130 .

 

 
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