IRHY9230CM MOSFET. Datasheet pdf. Equivalent
Type Designator: IRHY9230CM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 50 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO257AA
IRHY9230CM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRHY9230CM Datasheet (PDF)
irhy7230cm irhy9130cm irhy9230cm.pdf
The documentation and process conversion measures necessary to comply with this revision INCH-POUND shall be completed by 1 June 2014. MIL-PRF-19500/615G 1 April 2014 SUPERSEDING MIL-PRF-19500/615F 10 July 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D,
irhy9230cm.pdf
PD-91401IRHY9230CMJANSR2N7383200V, P-CHANNEL RADIATION HARDENEDREF: MIL-PRF-19500/615 POWER MOSFETRAD-Hard HEXFET TECHNOLOGY THRU-HOLE (TO-257AA)Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHY9230CM 100K Rads (Si) 0.8 -6.5A JANSR2N7383 IRHY93230CM 300K Rads (Si) 0.8 -6.5A JANSF2N7383 TO-257AAInternational Rectifiers RAD-Har
irhy9130cm.pdf
PD - 91400BIRHY9130CMRADIATION HARDENED JANSR2N7382100V, P-CHANNELPOWER MOSFETREF: MIL-PRF-19500/615THRU-HOLE (TO-257AA)RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part NumberIRHY9130CM 100K Rads (Si) 0.30 -11A JANSR2N7382IRHY93130CM 300K Rads (Si) 0.30 -11A JANSF2N7382TO-257AAInternational Rectifiers RADHard HEX
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
