IRFP048N Datasheet and Replacement

PD - 9.1409AIRFP048NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.016 Fully Avalanche RatedGID = 64ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisben

PD- 95422IRFP048NPbF Lead-Freewww.irf.com 106/16/04IRFP048NPbF2 www.irf.comIRFP048NPbFwww.irf.com 3IRFP048NPbF4 www.irf.comIRFP048NPbFwww.irf.com 5IRFP048NPbF6 www.irf.comIRFP048NPbFwww.irf.com 7IRFP048NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: THIS IS AN IRFPE30 WITH ASS

isc N-Channel MOSFET Transistor IRFP048NIIRFP048NFEATURESStatic drain-source on-resistance:RDS(on)16mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

PD- 95502IRFP048RPbF Lead-FreeAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V70*ID @ TC = 100C Continuous Drain Current, VGS @ 10V52 AIDM290Pulsed Drain Current PD @TC = 25CPower Dissipation 190 WLinear Derating Factor 1.3 W/CVGSGate-to-Source Voltage V20Single Pulse Avalanche Energy EAS200 mJPe

IRFP048, SiHFP048Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.018RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 110 Ease of ParallelingQgs (nC) 29 Simple Drive RequirementsQgd (nC) 38 Compliant to RoHS Directive 2002/95/ECConfi

IRFP048, SiHFP048Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.018RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 110 Ease of ParallelingQgs (nC) 29 Simple Drive RequirementsQgd (nC) 38 Compliant to RoHS Directive 2002/95/ECConf

iscN-Channel MOSFET Transistor IRFP048FEATURESLow drain-source on-resistance:RDS(ON) 18m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

iscN-Channel MOSFET Transistor IRFP048RFEATURESLow drain-source on-resistance:RDS(ON) 18m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE