IRHN9130 Specs and Replacement

Type Designator: IRHN9130

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO276AB

IRHN9130 substitution

- MOSFET ⓘ Cross-Reference Search

 

IRHN9130 datasheet

 ..1. Size:127K  international rectifier
irhn9130.pdf pdf_icon

IRHN9130

PD - 90886C RADIATION HARDENED IRHN9130 POWER MOSFET 100V, P-CHANNEL SURFACE MOUNT (SMD-1) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHN9130 100K Rads (Si) 0.3 -11A IRHN93130 300K Rads (Si) 0.3 -11A International Rectifier s RAD-Hard HEXFETTM technol- SMD-1 ogy provides high performance power MOSFETs for space applications. Th... See More ⇒

 8.1. Size:128K  international rectifier
irhn9150.pdf pdf_icon

IRHN9130

PD - 90885D IRHN9150 RADIATION HARDENED JANSR2N7422U POWER MOSFET 100V, P-CHANNEL SURFACE MOUNT (SMD-1) REF MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHN9150 100K Rads (Si) 0.080 -22A JANSR2N7422U IRHN93150 300K Rads (Si) 0.080 -22A JANSF2N7422U SMD-1 International Rectifier s RADHard HEXFET... See More ⇒

 8.2. Size:272K  international rectifier
irhm9150 irhm9250 irhn9150 irhn9250.pdf pdf_icon

IRHN9130

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U... See More ⇒

 9.1. Size:126K  international rectifier
irhn9250.pdf pdf_icon

IRHN9130

PD - 91300B IRHN9250 RADIATION HARDENED JANSR2N7423U POWER MOSFET 200V, P-CHANNEL SURFACE MOUNT (SMD-1) REF MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHN9250 100K Rads (Si) 0.315 -14A JANSR2N7423U IRHN93250 300K Rads (Si) 0.315 -14A JANSF2N7423U SMD-1 International Rectifier s RADHard HEXFET... See More ⇒

Detailed specifications: IRHN7130, IRHN7150, IRHN7230, IRHN7250, IRHN7250SE, IRHN7450, IRHN7450SE, IRHN7C50SE, IRLB4132, IRHN9150, IRHN9230, IRHN9250, IRHM57064, IRHM57160, IRHM57260, IRHM57260SE, IRHM57264SE

Keywords - IRHN9130 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.