All MOSFET. IRHMS57160 Datasheet

 

IRHMS57160 Datasheet and Replacement


   Type Designator: IRHMS57160
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO254AA
 

 IRHMS57160 substitution

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IRHMS57160 Datasheet (PDF)

 ..1. Size:270K  international rectifier
 irhms57064 irhms57160.pdf pdf_icon

IRHMS57160

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/698F shall be completed by 13 June 2015. 13 March 2015 SUPERSEDING MIL-PRF-19500/698E 20 May 2013 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, DEVICE TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR,

 5.1. Size:334K  international rectifier
 irhms57163se irhms57260se irhms57264se.pdf pdf_icon

IRHMS57160

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/685G shall be completed by 16 January 2015. 16 October 2014 SUPERSEDING MIL-PRF-19500/685F 6 May 2013 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JAN

 7.1. Size:245K  international rectifier
 irhms57z60.pdf pdf_icon

IRHMS57160

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/697F shall be completed by 11 June 2015. 11 March 2015 SUPERSEDING MIL-PRF-19500/697E 15 May 2013 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, DEVICE TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H

 8.1. Size:107K  international rectifier
 irhms597160.pdf pdf_icon

IRHMS57160

PD - 94283RADIATION HARDENED IRHMS597160POWER MOSFET100V, P-CHANNELTHRU-HOLE (Low-Ohmic TO-254AA)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHMS597160 100K Rads (Si) 0.049 -45A* IRHMS593160 300K Rads (Si) 0.049 -45A*Low-OhmicTO-254AAInternational Rectifiers R5TM technology providesFeatures:high performance power MOSFETs f

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Datasheet: IRHMB57Z60 , IRHMJ57160 , IRHMJ57260SE , IRHMJ7250 , IRHMK57160 , IRHMK57260SE , IRHMK597160 , IRHMS57064 , IRF520 , IRHMS57163SE , IRHMS57260SE , IRHMS57264SE , IRHMS57Z60 , IRHMS597064 , IRHMS597160 , IRHMS597260 , IRHMS597Z60 .

History: APT4080BN | 25N10G-TM3-T

Keywords - IRHMS57160 MOSFET datasheet

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