IRHMS57260SE Specs and Replacement

Type Designator: IRHMS57260SE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: TO254AA

IRHMS57260SE substitution

- MOSFET ⓘ Cross-Reference Search

 

IRHMS57260SE datasheet

 ..1. Size:334K  international rectifier
 irhms57163se irhms57260se irhms57264se.pdf pdf_icon

IRHMS57260SE

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/685G shall be completed by 16 January 2015. 16 October 2014 SUPERSEDING MIL-PRF-19500/685F 6 May 2013 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JAN... See More ⇒

 7.1. Size:270K  international rectifier
 irhms57064 irhms57160.pdf pdf_icon

IRHMS57260SE

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/698F shall be completed by 13 June 2015. 13 March 2015 SUPERSEDING MIL-PRF-19500/698E 20 May 2013 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, DEVICE TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, ... See More ⇒

 7.2. Size:245K  international rectifier
 irhms57z60.pdf pdf_icon

IRHMS57260SE

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/697F shall be completed by 11 June 2015. 11 March 2015 SUPERSEDING MIL-PRF-19500/697E 15 May 2013 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, DEVICE TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H ... See More ⇒

 8.1. Size:107K  international rectifier
 irhms597160.pdf pdf_icon

IRHMS57260SE

PD - 94283 RADIATION HARDENED IRHMS597160 POWER MOSFET 100V, P-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHMS597160 100K Rads (Si) 0.049 -45A* IRHMS593160 300K Rads (Si) 0.049 -45A* Low-Ohmic TO-254AA International Rectifier s R5TM technology provides Features high performance power MOSFETs f... See More ⇒

SHOW MORE

Detailed specifications: IRHMJ57260SE, IRHMJ7250, IRHMK57160, IRHMK57260SE, IRHMK597160, IRHMS57064, IRHMS57160, IRHMS57163SE, IRFB31N20D, IRHMS57264SE, IRHMS57Z60, IRHMS597064, IRHMS597160, IRHMS597260, IRHMS597Z60, IRHMS67160, IRHMS67164

Keywords - IRHMS57260SE MOSFET specs

 IRHMS57260SE cross reference

 IRHMS57260SE equivalent finder

 IRHMS57260SE pdf lookup

 IRHMS57260SE substitution

 IRHMS57260SE replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.