IRHMS597160 Specs and Replacement
Type Designator: IRHMS597160
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO254AA
IRHMS597160 substitution
- MOSFET ⓘ Cross-Reference Search
IRHMS597160 datasheet
irhms597160.pdf
PD - 94283 RADIATION HARDENED IRHMS597160 POWER MOSFET 100V, P-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHMS597160 100K Rads (Si) 0.049 -45A* IRHMS593160 300K Rads (Si) 0.049 -45A* Low-Ohmic TO-254AA International Rectifier s R5TM technology provides Features high performance power MOSFETs f... See More ⇒
irhms597160 irhms597260.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/713C completed by 18 February 2014. 18 December 2013 SUPERSEDING MIL-PRF-19500/713B 9 November 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, ... See More ⇒
irhms597064 irhms597z60.pdf
The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall be completed by 18 June 2014. MIL-PRF-19500/733C 18 April 2014 SUPERSEDING MIL-PRF-19500/733B 10 September 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N75... See More ⇒
irhms57064 irhms57160.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/698F shall be completed by 13 June 2015. 13 March 2015 SUPERSEDING MIL-PRF-19500/698E 20 May 2013 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, DEVICE TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, ... See More ⇒
Detailed specifications: IRHMK597160, IRHMS57064, IRHMS57160, IRHMS57163SE, IRHMS57260SE, IRHMS57264SE, IRHMS57Z60, IRHMS597064, IRFZ48N, IRHMS597260, IRHMS597Z60, IRHMS67160, IRHMS67164, IRHMS67260, IRHMS67264, IRH7054, IRH7130
Keywords - IRHMS597160 MOSFET specs
IRHMS597160 cross reference
IRHMS597160 equivalent finder
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IRHMS597160 substitution
IRHMS597160 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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