IRHMS597260 Specs and Replacement

Type Designator: IRHMS597260

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.103 Ohm

Package: TO254AA

IRHMS597260 substitution

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IRHMS597260 datasheet

 ..1. Size:248K  international rectifier
 irhms597160 irhms597260.pdf pdf_icon

IRHMS597260

INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/713C completed by 18 February 2014. 18 December 2013 SUPERSEDING MIL-PRF-19500/713B 9 November 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, ... See More ⇒

 6.1. Size:107K  international rectifier
 irhms597160.pdf pdf_icon

IRHMS597260

PD - 94283 RADIATION HARDENED IRHMS597160 POWER MOSFET 100V, P-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHMS597160 100K Rads (Si) 0.049 -45A* IRHMS593160 300K Rads (Si) 0.049 -45A* Low-Ohmic TO-254AA International Rectifier s R5TM technology provides Features high performance power MOSFETs f... See More ⇒

 6.2. Size:488K  international rectifier
 irhms597064 irhms597z60.pdf pdf_icon

IRHMS597260

The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall be completed by 18 June 2014. MIL-PRF-19500/733C 18 April 2014 SUPERSEDING MIL-PRF-19500/733B 10 September 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N75... See More ⇒

 8.1. Size:270K  international rectifier
 irhms57064 irhms57160.pdf pdf_icon

IRHMS597260

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/698F shall be completed by 13 June 2015. 13 March 2015 SUPERSEDING MIL-PRF-19500/698E 20 May 2013 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, DEVICE TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, ... See More ⇒

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Detailed specifications: IRHMS57064, IRHMS57160, IRHMS57163SE, IRHMS57260SE, IRHMS57264SE, IRHMS57Z60, IRHMS597064, IRHMS597160, IRFZ46N, IRHMS597Z60, IRHMS67160, IRHMS67164, IRHMS67260, IRHMS67264, IRH7054, IRH7130, IRH7150

Keywords - IRHMS597260 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.