IRHMS67264 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRHMS67264
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 208 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 45 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.041 Ohm
Package: TO254AA
IRHMS67264 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRHMS67264 Datasheet (PDF)
1.1. irhms67160 irhms67164 irhms67260 irhms67264.pdf 
Size:218K _international_rectifier
INCH-POUND The documentation and process conversion measures necessary to comply with this MIL-PRF-19500/753B revision shall be completed by 5 July 2013. 20 May 2013 SUPERSEDING MIL-PRF-19500/753A 19 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TY
5.1. irhms57064 irhms57160.pdf Size:270K _international_rectifier
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/698F shall be completed by 13 June 2015. 13 March 2015 SUPERSEDING MIL-PRF-19500/698E 20 May 2013 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, DEVICE TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR,
5.2. irhms597160.pdf Size:107K _international_rectifier
PD - 94283 RADIATION HARDENED IRHMS597160 POWER MOSFET 100V, P-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHMS597160 100K Rads (Si) 0.049? -45A* IRHMS593160 300K Rads (Si) 0.049? -45A* Low-Ohmic TO-254AA International Rectifier’s R5TM technology provides Features: high performance power MOSFETs for space
5.3. irhms597160 irhms597260.pdf Size:248K _international_rectifier
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/713C completed by 18 February 2014. 18 December 2013 SUPERSEDING MIL-PRF-19500/713B 9 November 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2,
5.4. irhms597064 irhms597z60.pdf Size:488K _international_rectifier
The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall be completed by 18 June 2014. MIL-PRF-19500/733C 18 April 2014 SUPERSEDING MIL-PRF-19500/733B 10 September 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N75
5.5. irhms57z60.pdf Size:245K _international_rectifier
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/697F shall be completed by 11 June 2015. 11 March 2015 SUPERSEDING MIL-PRF-19500/697E 15 May 2013 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, DEVICE TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
5.6. irhms57163se irhms57260se irhms57264se.pdf Size:334K _international_rectifier
The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/685G shall be completed by 16 January 2015. 16 October 2014 SUPERSEDING MIL-PRF-19500/685F 6 May 2013 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JAN
Datasheet: IRHMS57Z60 , IRHMS597064 , IRHMS597160 , IRHMS597260 , IRHMS597Z60 , IRHMS67160 , IRHMS67164 , IRHMS67260 , 2SK105 , IRH7054 , IRH7130 , IRH7150 , IRH7230 , IRH7250 , IRH7250SE , IRH7450 , IRH7450SE .
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