IRHMS67264
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRHMS67264
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 208
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 45
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 170
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041
Ohm
Package:
TO254AA
IRHMS67264
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRHMS67264
Datasheet (PDF)
..1. Size:218K international rectifier
irhms67160 irhms67164 irhms67260 irhms67264.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this MIL-PRF-19500/753B revision shall be completed by 5 July 2013. 20 May 2013 SUPERSEDING MIL-PRF-19500/753A 19 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TY
9.1. Size:107K international rectifier
irhms597160.pdf
PD - 94283RADIATION HARDENED IRHMS597160POWER MOSFET100V, P-CHANNELTHRU-HOLE (Low-Ohmic TO-254AA)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHMS597160 100K Rads (Si) 0.049 -45A* IRHMS593160 300K Rads (Si) 0.049 -45A*Low-OhmicTO-254AAInternational Rectifiers R5TM technology providesFeatures:high performance power MOSFETs f
9.2. Size:488K international rectifier
irhms597064 irhms597z60.pdf
The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall be completed by 18 June 2014. MIL-PRF-19500/733C 18 April 2014 SUPERSEDING MIL-PRF-19500/733B 10 September 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N75
9.3. Size:270K international rectifier
irhms57064 irhms57160.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/698F shall be completed by 13 June 2015. 13 March 2015 SUPERSEDING MIL-PRF-19500/698E 20 May 2013 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, DEVICE TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR,
9.4. Size:334K international rectifier
irhms57163se irhms57260se irhms57264se.pdf
The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/685G shall be completed by 16 January 2015. 16 October 2014 SUPERSEDING MIL-PRF-19500/685F 6 May 2013 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JAN
9.5. Size:248K international rectifier
irhms597160 irhms597260.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/713C completed by 18 February 2014. 18 December 2013 SUPERSEDING MIL-PRF-19500/713B 9 November 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2,
9.6. Size:245K international rectifier
irhms57z60.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/697F shall be completed by 11 June 2015. 11 March 2015 SUPERSEDING MIL-PRF-19500/697E 15 May 2013 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, DEVICE TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H
Datasheet: IRFP344
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