All MOSFET. IRFP133 Equivalents Search

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PD- 91503C IRFP150N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175 C Operating Temperature Fast Switching RDS(on) = 0.036W Fully Avalanche Rated G ID = 42A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi... See More ⇒

PD - 95509A IRFP1405PbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching RDS(on) = 5.3m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 95A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per si... See More ⇒

PD - 97724 AUTOMOTIVE GRADE AUIRFP1405 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 55V l Dynamic dV/dT Rating RDS(on) typ. 4.2m l 175 C Operating Temperature l Fast Switching max 5.3m G l Fully Avalanche Rated ID (Silicon Limited) 160A l Repetitive Avalanche Allowed S ID (Package Limited) 95A up to Tjmax l Lead-Free, R... See More ⇒

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PD - 95517 SMPS MOSFET IRFP15N60LPbF Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 15A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. ... See More ⇒

PD - 96291 IRFP150MPbF Lead-Free www.irf.com 1 03/01/10 IRFP150MPbF 2 www.irf.com IRFP150MPbF www.irf.com 3 IRFP150MPbF 4 www.irf.com IRFP150MPbF www.irf.com 5 IRFP150MPbF 6 www.irf.com IRFP150MPbF www.irf.com 7 IRFP150MPbF TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) TO-247AC Part Marking Information Data and specifications subject... See More ⇒

PD - 94459A IRFP150V HEXFET Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 24m G l Fast Switching l Fully Avalanche Rated ID = 47A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re... See More ⇒

PD - 94351 IRFP17N50LS SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply (SMPS) VDSS RDS(on) typ. Trr ID Uninterruptible Power Supply High Speed Power Switching 500V 0.28 170ns 16A ZVS and High Frequency Circuit PWM Inverters Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully... See More ⇒

PD - 95002 IRFP150NPbF Lead-Free www.irf.com 1 2/11/04 IRFP150NPbF 2 www.irf.com IRFP150NPbF www.irf.com 3 IRFP150NPbF 4 www.irf.com IRFP150NPbF www.irf.com 5 IRFP150NPbF 6 www.irf.com IRFP150NPbF www.irf.com 7 IRFP150NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 1... See More ⇒

PD- 95424 IRFP140PbF Lead-Free www.irf.com 1 06/17/04 IRFP140PbF 2 www.irf.com IRFP140PbF www.irf.com 3 IRFP140PbF 4 www.irf.com IRFP140PbF www.irf.com 5 IRFP140PbF 6 www.irf.com IRFP140PbF www.irf.com 7 IRFP140PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE THIS IS AN IRFPE30 WITH ASSEMBLY PA... See More ⇒

PD - 95003 IRFP150PbF Lead-Free 2/11/04 Document Number 91203 www.vishay.com 1 IRFP150PbF Document Number 91203 www.vishay.com 2 IRFP150PbF Document Number 91203 www.vishay.com 3 IRFP150PbF Document Number 91203 www.vishay.com 4 IRFP150PbF Document Number 91203 www.vishay.com 5 IRFP150PbF Document Number 91203 www.vishay.com 6 IRFP150PbF TO-247AC Package Ou... See More ⇒

PD - 94322 IRFP17N50L SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply (SMPS) RDS(on) typ. Trr typ. ID VDSS Zero Voltage Switching (ZVS) and High 500V 0.28 170ns 16A Frequency Circuit Uninterruptible Power Supply High Speed Power Switching PWM Inverters Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and D... See More ⇒

PD- 95711 IRFP140NPbF Lead-Free www.irf.com 1 8/2/04 IRFP140NPbF 2 www.irf.com IRFP140NPbF www.irf.com 3 IRFP140NPbF 4 www.irf.com IRFP140NPbF www.irf.com 5 IRFP140NPbF 6 www.irf.com IRFP140NPbF www.irf.com 7 IRFP140NPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE T HIS IS AN IRFPE30 WITH ASSEM... See More ⇒

PD - 91343B IRFP140N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175 C Operating Temperature Fast Switching RDS(on) = 0.052 Fully Avalanche Rated G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. Thi... See More ⇒

PD - 95662 IRFP17N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 500V 0.28 170ns 16A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications.... See More ⇒

PD - 94415A SMPS MOSFET IRFP15N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 15A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate c... See More ⇒

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IRFP150A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 43 A Improved Gate Charge Extended Safe Operating Area TO-3P 175 C Operating Temperature A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source... See More ⇒

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 43 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V 1 Lower RDS(ON) 0.032 (Typ.) 2 3 1.Gate 2. Drain 3. Source Absolute Maximum R... See More ⇒

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IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.055 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 175 C Operating Temperature COMPLIANT Qgs (nC) 29 Fast Switching Qgd (nC) 68 Ease of Paralleling Configuration Single S... See More ⇒

IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY SuperFast Body Diode Eliminates the Need VDS (V) 500 Available For External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.28 RoHS* Low Gate Charge Results in Simple Drive Qg (Max.) (nC) 130 COMPLIANT Requirement Qgs (nC) 33 Enhanced dV/dt Capabilities Offer Improved Qgd (nC) 59 Rugg... See More ⇒

IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY SuperFast Body Diode Eliminates the Need VDS (V) 500 Available For External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.28 RoHS* Low Gate Charge Results in Simple Drive Qg (Max.) (nC) 130 COMPLIANT Requirement Qgs (nC) 33 Enhanced dV/dt Capabilities Offer Improved Qgd (nC) 59 Rugg... See More ⇒

IRFP15N60L, SiHFP15N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.385 RoHS* Lower Gate Charge Results in Simple Drive Qg (Max.) (nC) 100 COMPLIANT Requirements Qgs (nC) 30 Qgd (nC) 46 Enhanced dV/dt Capabilities Offer Improved ... See More ⇒

IRFP140, SiHFP140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.077 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 72 COMPLIANT 175 C Operating Temperature Qgs (nC) 11 Fast Switching Qgd (nC) 32 Ease of Paralleling Configuration Single Sim... See More ⇒

PD - 95003 IRFP150PbF Lead-Free www.irf.com 1 2/11/04 IRFP150PbF 2 www.irf.com IRFP150PbF www.irf.com 3 IRFP150PbF 4 www.irf.com IRFP150PbF www.irf.com 5 IRFP150PbF 6 www.irf.com IRFP150PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

IRFP140N www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.035 at VGS = 10 V 100 50a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D TO-247AC G S D G S N-Channel MOSFET ABSOLUTE MAXIMUM RAT... See More ⇒

isc N-Channel MOSFET Transistor IRFP1405 IIRFP1405 FEATURES Static drain-source on-resistance RDS(on) 5.3m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sour... See More ⇒

isc N-Channel MOSFET Transistor IRFP150N IIRFP150N FEATURES Static drain-source on-resistance RDS(on) 36m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP150A FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.04 (Max) DS(on) Fast Switching 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode ... See More ⇒

iscN-Channel MOSFET Transistor IRFP140 FEATURES Low drain-source on-resistance RDS(ON) 77m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒

iscN-Channel MOSFET Transistor IRFP150 FEATURES Low drain-source on-resistance RDS(ON) 55m @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒

iscN-Channel MOSFET Transistor IRFP17N50L FEATURES Low drain-source on-resistance RDS(ON) =0.32 (MAX) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒

isc N-Channel MOSFET Transistor IRFP140N IIRFP140N FEATURES Static drain-source on-resistance RDS(on) 52m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒

isc N-Channel MOSFET Transistor IRFP150M IIRFP150M FEATURES Static drain-source on-resistance RDS(on) 36m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Fully Avalanche Rated ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source ... See More ⇒

isc N-Channel MOSFET Transistor IRFP15N60L DESCRIPTION Drain Current I =40A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R =0.46 (Max) DS(on) High Power,High Speed Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies UPS Motor contro... See More ⇒