All MOSFET. IRFM1310ST Datasheet

 

IRFM1310ST MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFM1310ST

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 34 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 56 nS

Drain-Source Capacitance (Cd): 450 pF

Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

Package: TO254Z

IRFM1310ST Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFM1310ST Datasheet (PDF)

1.1. irfm1310st.pdf Size:22K _update

IRFM1310ST
IRFM1310ST

IRFM1310ST MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS 100V ID(cont) 34A RDS(on) 0.070 FEATURES • REPETITIVE AVALANCHE RATING • ISOLATED AND HERMETICALLY SEALED • EASE OF PARALLELING TO–254Z – Package • SIMPLE DRIVE REQUIREMENTS Pin 1 – Drain Pin 2 – Sou

5.1. irfm120atf.pdf Size:267K _update

IRFM1310ST
IRFM1310ST

IRFM120A Advanced Power MOSFET IEEE802.3af Compatible FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) : 0.155 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum

5.2. irfm120a.pdf Size:269K _fairchild_semi

IRFM1310ST
IRFM1310ST

IRFM120A Advanced Power MOSFET IEEE802.3af Compatible FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) : 0.155 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Rat

 5.3. irfm110a.pdf Size:263K _fairchild_semi

IRFM1310ST
IRFM1310ST

IRFM110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current : 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) : 0.289 ? (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charac

5.4. irfm150.pdf Size:309K _international_rectifier

IRFM1310ST
IRFM1310ST

 5.5. irfm140.pdf Size:211K _international_rectifier

IRFM1310ST
IRFM1310ST

5.6. irfm120a.pdf Size:965K _samsung

IRFM1310ST
IRFM1310ST

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) : 0.155 ? (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

5.7. irfm110a.pdf Size:950K _samsung

IRFM1310ST
IRFM1310ST

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) : 0.289 ? (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

5.8. 2n7224 irfm150.pdf Size:23K _semelab

IRFM1310ST
IRFM1310ST

2N7224 SEME IRFM150 LAB MECHANICAL DATA Dimensions in mm (inches) NCHANNEL 13.59 (0.535) 6.32 (0.249) POWER MOSFET 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) Dia. 3.78 (0.149) 1.27 (0.050) VDSS 100V ID(cont) 34A RDS(on) 0.070 1 2 3 FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE 0.89 (0.035) 1.14 (0.045) SIM

Datasheet: IRH7450 , IRH7450SE , IRH9130 , IRH9150 , IRH9230 , IRH9250 , IRFM064 , IRFM120ATF , IRF840 , IRFM210BTF_FP001 , IRFM220BTF_FP001 , IRFM250D , IRFM254 , IRFM260 , IRFM3205 , IRFM450 , IRFM5210 .

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