All MOSFET. IRFP141 Datasheet

 

IRFP141 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP141

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 180 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 31 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 39 nC

Rise Time (tr): 72 nS

Drain-Source Capacitance (Cd): 500 pF

Maximum Drain-Source On-State Resistance (Rds): 0.077 Ohm

Package: TO3P

IRFP141 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP141 Datasheet (PDF)

8.1. irfp140pbf.pdf Size:1220K _international_rectifier

IRFP141
IRFP141

PD- 95424IRFP140PbF Lead-Freewww.irf.com 106/17/04IRFP140PbF2 www.irf.comIRFP140PbFwww.irf.com 3IRFP140PbF4 www.irf.comIRFP140PbFwww.irf.com 5IRFP140PbF6 www.irf.comIRFP140PbFwww.irf.com 7IRFP140PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY PA

8.2. irfp140-143.pdf Size:492K _international_rectifier

IRFP141
IRFP141

 8.3. irfp140.pdf Size:169K _international_rectifier

IRFP141
IRFP141

8.4. irfp140n.pdf Size:158K _international_rectifier

IRFP141
IRFP141

PD - 91343BIRFP140NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 100V 175C Operating Temperature Fast SwitchingRDS(on) = 0.052 Fully Avalanche RatedGID = 33ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. Thi

 8.5. irfp1405pbf.pdf Size:264K _international_rectifier

IRFP141
IRFP141

PD - 95509AIRFP1405PbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 5.3m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 95ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per si

8.6. irfp140a.pdf Size:284K _samsung

IRFP141
IRFP141

8.7. irfp140 sihfp140.pdf Size:1752K _vishay

IRFP141
IRFP141

IRFP140, SiHFP140Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.077RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 72 COMPLIANT 175 C Operating TemperatureQgs (nC) 11 Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Single Sim

8.8. irfp140npbf.pdf Size:348K _infineon

IRFP141
IRFP141

PD- 95711IRFP140NPbF Lead-Freewww.irf.com 18/2/04IRFP140NPbF2 www.irf.comIRFP140NPbFwww.irf.com 3IRFP140NPbF4 www.irf.comIRFP140NPbFwww.irf.com 5IRFP140NPbF6 www.irf.comIRFP140NPbFwww.irf.com 7IRFP140NPbFTO-247AC Package Outline Dimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: T HIS IS AN IRFPE30 WITH ASSEM

8.9. irfp1405pbf.pdf Size:264K _infineon

IRFP141
IRFP141

PD - 95509AIRFP1405PbFHEXFET Power MOSFETFeatures Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 5.3m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 95ADescriptionSThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowon-resistance per si

8.10. irfp140.pdf Size:400K _inchange_semiconductor

IRFP141
IRFP141

iscN-Channel MOSFET Transistor IRFP140FEATURESLow drain-source on-resistance:RDS(ON) 77m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

8.11. irfp140n.pdf Size:241K _inchange_semiconductor

IRFP141
IRFP141

isc N-Channel MOSFET Transistor IRFP140NIIRFP140NFEATURESStatic drain-source on-resistance:RDS(on)52mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

8.12. irfp1405.pdf Size:241K _inchange_semiconductor

IRFP141
IRFP141

isc N-Channel MOSFET Transistor IRFP1405IIRFP1405FEATURESStatic drain-source on-resistance:RDS(on)5.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour

Datasheet: IRFP064N , IRFP130 , IRFP131 , IRFP132 , IRFP133 , IRFP140 , IRFP140A , IRFP140N , IRFP260M , IRFP142 , IRFP143 , APT50M38JFLL , IRFP150 , IRFP150A , IRFP150FI , IRFP150N , IRFP151 .

 

 
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