All MOSFET. IRFIZ24GPBF Datasheet

 

IRFIZ24GPBF Datasheet and Replacement


   Type Designator: IRFIZ24GPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO220F
 

 IRFIZ24GPBF substitution

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IRFIZ24GPBF Datasheet (PDF)

 ..1. Size:1555K  international rectifier
 irfiz24g irfiz24gpbf.pdf pdf_icon

IRFIZ24GPBF

IRFIZ24G, SiHFIZ24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.10f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.8 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt Rating Low Ther

 5.1. Size:2575K  cn vbsemi
 irfiz24gp.pdf pdf_icon

IRFIZ24GPBF

IRFIZ24GPwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 10 V 0.027f = 60 Hz) COMPLIANTQg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfiguration Single

 6.1. Size:919K  international rectifier
 irfiz24g.pdf pdf_icon

IRFIZ24GPBF

PD - 94875IRFIZ24GPbF Lead-Free12/9/03Document Number: 91187 www.vishay.com1IRFIZ24GPbFDocument Number: 91187 www.vishay.com2IRFIZ24GPbFDocument Number: 91187 www.vishay.com3IRFIZ24GPbFDocument Number: 91187 www.vishay.com4IRFIZ24GPbFDocument Number: 91187 www.vishay.com5IRFIZ24GPbFDocument Number: 91187 www.vishay.com6IRFIZ24GPbFTO-220 Full-

 6.2. Size:1554K  vishay
 irfiz24g sihfiz24g.pdf pdf_icon

IRFIZ24GPBF

IRFIZ24G, SiHFIZ24GVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.10f = 60 Hz) RoHS*COMPLIANTQg (Max.) (nC) 25 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 5.8 175 C Operating TemperatureQgd (nC) 11 Dynamic dV/dt Rating Low Ther

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Datasheet: IRFNJ540 , IRFNJ9130 , IRFNJZ48 , IRFNL210BTAFP001 , IRFIZ14G , IRFIZ14GPBF , IRFIZ24EPBF , IRFIZ24G , 4435 , IRFIZ24NPBF , IRFIZ34G , IRFIZ34GPBF , IRFIZ34NPBF , IRFIZ44G , IRFIZ44GPBF , IRFIZ44NPBF , IRFIZ46NPBF .

History: FQPF10N60CF

Keywords - IRFIZ24GPBF MOSFET datasheet

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